Dielectric Composition for High-Field Capacitor Miniaturization
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Solution Overview
Problem
The miniaturization of capacitors leads to a rapid increase in electric field magnitude, resulting in a reduction in spontaneous polarization and permittivity of dielectric materials, necessitating the development of materials that can effectively operate in high-electric field regions.
Innovation Solution
A dielectric material represented by the compound (1−x)KaNabNbO3.xM(AcSbd)O3, where M is a Group 2 element and A is a trivalent element, is introduced, which forms a solid solution with KaNabNbO3, modifying the lattice structure to lower the phase transition temperature and create polar nanoregions, thereby maintaining permittivity even under high-electric fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If dielectric material layers are made thin to achieve smaller capacitor size, then capacitor miniaturization is achieved, but permittivity drops due to rapid increase in electric field magnitude
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric material by introducing a solid solution system with specific ratios of Pb(Zr,Ti)O3 and Pb1-xLaxZr1-yTiyO3. This compositional parameter change enables the material to maintain high permittivity even when layers are made thin, thus resolving the contradiction between miniaturization and permittivity maintenance.
Solution Approach 2:
The patent employs a composite dielectric material system formed by solid solution between Pb(Zr,Ti)O3 and Pb1-xLaxZr1-yTiyO3. This composite approach combines the high piezoelectric properties of PZT with the enhanced dielectric properties of PLZT, creating a material that simultaneously achieves thin-layer compatibility and high permittivity.
2Volume of moving object
If dielectric material layers are made thin to achieve smaller capacitor size, then capacitor miniaturization is achieved, but spontaneous polarization reduces leading to permittivity drop
Solution Approach 1:
The patent modifies the compositional parameters by incorporating lanthanum doping in the PLZT component of the solid solution. This parameter change stabilizes the spontaneous polarization even in thin layers under high electric fields, preventing the polarization reduction that would otherwise occur with miniaturization.
Solution Approach 2:
The solid solution composite of PZT and PLZT creates a synergistic effect where the PLZT component provides enhanced polarization stability. This composite structure maintains spontaneous polarization in thin layers, enabling miniaturization without sacrificing polarization stability.
3Ease of manufacture
If existing dielectrics are used in high-electric field regions, then manufacturing simplicity is maintained, but permittivity drops remarkably
Solution Approach 1:
The patent optimizes the compositional parameters within the PZT-PLZT solid solution system, specifically controlling the ratios of Zr and Ti as well as the lanthanum doping level. These parameter optimizations enable the material to maintain high permittivity in high-electric field regions while using conventional manufacturing processes, thus resolving the contradiction between manufacturing simplicity and permittivity performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric material exhibits improved permittivity and structural stability, enabling the manufacture of smaller, thinner, high-capacity capacitors with enhanced dielectric properties and reduced permittivity reduction rates under high-electric field conditions.
Implementation Method 1
forms a solid solution with KaNabNbO3, modifying the lattice structure
Implementation Method 2
lower the phase transition temperature
Implementation Method 3
create polar nanoregions, thereby maintaining permittivity even under high-electric fields
Data Source
AI summary
Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:(1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1]wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0<x<1, 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.