Dielectric Film Composition for High Breakdown Voltage
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Solution Overview
Problem
Dielectric materials used in high-frequency components face challenges with size reduction leading to decreased dielectric breakdown voltage and increased leak current, making it difficult to apply them effectively in high-frequency regions.
Innovation Solution
A dielectric film comprising a complex oxide with a specific composition (xAO-yBO-zC2O5) is developed, where A includes barium, calcium, or strontium, B includes magnesium or zinc, and C includes niobium or tantalum, with controlled proportions and crystallinity to achieve high dielectric breakdown voltage even in thin film form.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the dielectric material is reduced in size for high frequency components, then the component can be applied to high frequency regions, but the dielectric breakdown voltage decreases and leak current increases
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric material by specifying precise ranges for x, y, and z in the formula xAO·yBO·zC2O5, and controls the crystalline structure parameters through the full width at half maximum constraint. These parameter changes enable the material to maintain high dielectric breakdown voltage even when reduced to thin film form for high frequency applications.
Solution Approach 2:
The patent uses a composite oxide material comprising multiple metal elements (A: barium, calcium, or strontium; B: magnesium or zinc; C: niobium or tantalum) in specific proportions. This composite structure combines the advantages of different metal oxides to achieve both high dielectric breakdown voltage and suitability for thin film formation in high frequency components.
2Length of stationary object
If the thickness of the dielectric material is thinned, then the component size is reduced, but the dielectric breakdown voltage decreases causing increased leak current
Solution Approach 1:
The patent optimizes the compositional parameters (x, y, z ratios) and structural parameters (crystalline orientation indicated by FWHM) of the dielectric material to maintain high breakdown voltage even at reduced thickness. This enables thin film formation without compromising electrical performance.
Solution Approach 2:
The patent achieves uniform distribution of multiple metal elements throughout the dielectric film structure, creating consistent local properties that prevent weak points and ensure high breakdown voltage throughout the entire thin film, thereby reducing leak current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric film achieves a high dielectric breakdown voltage and improved Q value, suitable for high-frequency applications without the size limitations and leak current issues of traditional materials.
Implementation Method 1
a dielectric film comprising a complex oxide represented by a general formula xAO·yBO·zC2O5 as a main component
Implementation Method 2
a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film
Data Source
AI summary
A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film.