Dielectric Grid for Back Side Illumination Sensors

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Solution Overview

Problem

Current semiconductor manufacturing methods for back side illumination (BSI) image sensors face challenges in enhancing light sensitivity and quantum efficiency due to reflection and optical cross-talk issues.

Innovation Solution

The formation of a dielectric grid on the back side of semiconductor devices using a patterned insulating material layer, which includes a high-k dielectric capping material, reduces light reflection and improves light convergence to photodiode regions, thereby increasing quantum efficiency and signal quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If light enters from the back side of the substrate in BSI sensors, then light sensitivity is improved, but total reflection and optical cross-talk occur

Engineering Contradiction:
Improvelight sensitivityVSAvoidtotal reflection and optical cross-talk
Core Design Contradiction:
Illumination intensityVSObject-generated harmful factors

Solution Approach 1:

The patent divides the back side surface into a grid pattern of transparent and opaque regions. The dielectric grid structure segments the light paths, allowing light to pass through transparent regions while blocking cross-talk in opaque regions. This segmentation resolves the contradiction by enabling back-side light entry for sensitivity while preventing harmful reflection and cross-talk through spatial division.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different optical properties to different regions of the back side surface. The dielectric grid creates localized transparent regions for light entry and opaque regions for light blocking. This local differentiation of optical quality allows the sensor to achieve high light sensitivity where needed while preventing cross-talk in specific areas, resolving the contradiction between sensitivity and harmful optical effects.

Inventive Principle:
Principle #3Local quality

2Reliability

If a dielectric grid with high-k dielectric material is formed on the back side, then quantum efficiency increases, but manufacturing complexity increases

Engineering Contradiction:
Improvequantum efficiencyVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the dielectric grid formation with existing manufacturing steps such as color filter deposition or lens formation. By merging the grid creation into already-present process steps, the patent achieves high quantum efficiency through the high-k dielectric material while minimizing additional manufacturing complexity. The grid is formed as part of the existing multi-layer structure rather than as a separate complex process.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent utilizes the high-k dielectric property of specific materials to achieve enhanced quantum efficiency. By selecting materials with high dielectric constants and optimizing their thickness and pattern dimensions, the patent improves light convergence and blocking performance. These parameter optimizations are achieved through standard deposition and lithography processes, avoiding excessive manufacturing complexity while achieving the desired reliability improvement.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If multiple insulating material layers are deposited and patterned to form the grid, then light convergence to photodiode regions is improved, but manufacturing time increases

Engineering Contradiction:
Improvelight convergence precisionVSAvoidmanufacturing cycle time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent forms the dielectric grid structure before final sensor assembly and testing. By preparing the light convergence structure in advance during the manufacturing process, the patent ensures precise light path control is built into the device architecture. This preliminary formation of the optical structure allows for optimized light convergence precision while enabling parallel processing of other device components, thereby reducing overall manufacturing cycle time.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent designs the dielectric grid structure to serve multiple functions simultaneously: it blocks cross-talk, converges light to photodiode regions, and provides mechanical support. By creating a multi-functional structure, the patent achieves precise light convergence without requiring separate dedicated components for each function. This reduces the total number of manufacturing steps and materials needed, thereby decreasing manufacturing cycle time while maintaining high precision.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dielectric grid enhances the sensitivity and quantum efficiency of BSI sensors by minimizing total reflection and optical cross-talk, while being cost-effective and easily integratable into existing manufacturing processes.

Implementation Method 1

The grid members may comprise a tapered configuration, wherein the sidewalls of the grid members are tapered from a first width at a first height above the back side to a second width at a second height above the back side. Incident light may be bent by the grid members to be convergent onto a photodiode region within the substrate.

Methodology Applied
Scientific EffectRefraction: Refraction

Implementation Method 2

BSI sensors are capable of capturing more of an image signal than front side illumination sensors due to a reduced reflection of light.

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS8815630B1Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods
Publication Date: 2014.08.26 PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC
  • US8815630B1 patent drawing
  • US8815630B1 patent drawing
  • US8815630B1 patent drawing

AI summary

Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece.