Solid-State Devices TRIZ Cases

A transient voltage suppressor diode uses a localized intrinsic layer reduction to accelerate turn-on speed while preserving device capacitance.

Roughened organic and inorganic layers interlock to boost adhesion strength, preventing separation caused by internal stresses.

A substrate recess reflects optical signals away from the integrated circuit package to enable compact opto-electric integration.

Segmented drain select gate electrodes prevent undesired erase operations and voltage threshold upshifts during GIDL erase cycles.

A compensation film adjusts phase retardation in flexible OLED panels, resolving the trade-off between reflection reduction and substrate flexibility.

Segmented hole injection layers with stepped HOMO levels reduce driving voltage and power consumption while maintaining stable color characteristics.

A semiconductor transistor incorporates a metal oxide layer on its channel sidewalls to detect target gases through resistance changes.

An annular interface design with low thermal conductivity minimizes heat loss and prevents resistor distribution failures during etching.

COA substrate manufacturing method eliminates extra passivation layer and minimizes capacitive coupling effects between scan and data lines.

A bendable substrate with a ductile insulating layer prevents cracking in light-emitting units while maintaining structural strength.

Nitride oxidation diffuses nitrogen into oxide layers to strengthen gate structures, reducing fabrication complexity for logic and memory devices.

A thermally activated delayed fluorescence dopant emits light at interfaces between the emission layer and blocking materials.

A double-gate structure concentrates electric fields on memory gate corners to enhance hole injection during erase operations.

Fiducial detection transforms printer control data to correct substrate misalignment, maintaining printing speed while ensuring registration accuracy.

Opaque conductive handling layer on transparent substrates reflects radiation for accurate detection and alignment during fabrication.

A back-side illuminated image sensor uses a reflective trench to shield the pixel memory node.

Segmented write currents in SOT-MRAM grids enable individual device addressability through combined magnetic torque application.

Wafer-level packaging replaces fragile bond wires with direct solder ball connections, reducing package height and size.

Top gate TFT fabrication method reduces patterning steps from 9 to 5, lowering production costs and improving yield rates.

A coplanar metal-insulator-metal capacitor structure uses planar electrodes to prevent electrode damage during fabrication.

An infrared blocking filter protects optoelectronic sensors by absorbing unwanted infrared wavelengths before they reach the detection element.

A relative angle detection device corrects magnetic field sensing unit outputs using amplitude ratios between orthogonal components.

A white light polymer material connects red, green, and blue light-emitting units to polystyrene side chains.

Multi-layer dielectric electrode formation enables small reset currents and low power consumption while addressing tight process variation specifications.

Merging a diode with a polysilicon thin film transistor reduces the voltage rise time constant caused by high ON resistance, enabling faster level shifting.

Air gaps in interlayer insulating layers reduce capacitance between word lines, improving program speed.

Segmented electrode design uses support substrate and insulating layer to improve heat dissipation and reliability during high-current operations.

A memory device controller tailors program voltages to individual cells using sequential operations.

Segmenting insulation into an organic polymer and inorganic material protects organic layers from moisture while maintaining electrical contact.

A light reflecting member with a protrusion over the wire bonding ball redirects optical energy away from the metal substrate.

Glass frit seals OLED substrates, preventing oxygen and moisture ingress that degrades metallic conductive lines.

Merging support and contact functions into single structures reduces terrace area, increasing device density while maintaining reliability.

Curving the substrate and adding a reflective layer redirects light to photodiodes, increasing quantum efficiency.

Recessed portions in the insulating dielectric layer of OLED touch panels enable direct light emission from pixel units without structural obstruction.

Trenches between structure units form textured regions that redirect forward light output, resolving complexity trade-offs in LED design.

A receptor structure with an opening guides organic semiconductor liquid to the channel region.

Shared source lines maintain virtual ground potential to reduce subthreshold leakage power consumption in high-density memory cells.

A series diode electro-thermal circuit adjusts intermediate stage temperatures to achieve active thermal isolation in silicon bolometer pixels.

A light emitting device uses a sloped reflection material layer to redirect lateral light emission toward extraction paths.

A composite host material system combines carbazole and triazine derivatives to optimize charge transport in organic electroluminescent devices.

Patterned walls and wavelength conversion layers improve color uniformity while minimizing the mura effect in LED displays.

Multi-layer connection electrode structure reduces resistance in array substrates, enabling high-density Micro LED arrangements with sufficient current supply.

Tilted lead frame surfaces reflect light to enhance emission efficiency, resolving energy loss from blue-to-white conversion.

A spin orbit torque magnetic RAM free layer uses cobalt and permalloy segmentation to maximize spin transparency.

A patterned dielectric grid on the back side of semiconductor devices converges incident light onto photodiode regions.

Selective deposition forms a uniform charge storage layer to reduce parasitic capacitance and improve coupling ratios in NAND flash memory.

Separating the control unit from the cassette resolves antenna alignment issues and reduces weight by eliminating heavy X-ray shielding.

Thermal bimetal actuation adjusts backlight curvature to resolve fixed-shape distortion in curved TVs without adding mechanical complexity.

A light-obstructing layer entirely covers the semiconductor layer to reduce backlight illumination exposure.