Semiconductor Gas Sensor With Sidewall Metal Oxide
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Solution Overview
Problem
The integration of complex and reduced-scale semiconductor integrated circuit (IC) structures with electrical components poses challenges in enhancing device performance and ensuring compatibility, requiring innovative solutions for effective integration and gas sensing capabilities.
Innovation Solution
A semiconductor structure incorporating a transistor with a metal oxide layer exposed to the environment, which reacts with target gases to change electrical resistance, and an interconnect structure with a dielectric layer and metal interconnects, allowing for gas detection and electrical connection to external devices, including alarms and temperature control loops.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If IC structures are reduced in scale and increased in complexity, then integration density is improved, but compatibility with electrical components deteriorates
Solution Approach 1:
The patent introduces a vertical dimension by forming the metal oxide layer on the sidewalls of the channel region through epitaxial growth. This sidewall configuration allows gas sensing functionality to be added without occupying horizontal space, thereby maintaining high integration density while enabling compatibility with electrical components through the vertical utilization of the transistor structure.
Solution Approach 2:
The transistor structure is designed to serve multiple functions: it acts as both a switching device and a gas sensor. The metal oxide layer formed on the sidewalls enables gas detection while the transistor continues to provide electrical switching functionality. This multi-functionality allows the IC structure to be integrated with electrical components without requiring separate dedicated sensor structures, thus improving compatibility.
2Measurement precision
If metal oxide layer is formed on channel region, then gas sensing sensitivity is improved, but manufacturing complexity increases
Solution Approach 1:
The metal oxide layer is formed during the epitaxial growth process of the channel region, before subsequent transistor fabrication steps. By incorporating the metal oxide layer formation into the existing epitaxial process sequence, the patent avoids adding separate manufacturing steps. The metal oxide is deposited concurrently with or during the channel region formation, thereby improving gas sensing sensitivity without significantly increasing manufacturing complexity.
3Adaptability or versatility
If interconnect structure is added for external device connection, then adaptability is improved, but device complexity increases
Solution Approach 1:
The interconnect structure is merged with the existing transistor fabrication process. The metal interconnects are formed using the same deposition and patterning steps as the transistor electrodes, and the dielectric layer is integrated into the existing insulation structure. This merging approach enables connection capability with external devices while avoiding the need for separate, additional manufacturing processes, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables enhanced sensitivity and compatibility in semiconductor devices for gas sensing, allowing for real-time monitoring of gas concentrations and triggering alarms when unsafe levels are detected, while maintaining stable electrical performance.
Implementation Method 1
A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment
Implementation Method 2
reacts with target gases to change electrical resistance
Data Source
AI summary
A method for manufacturing a semiconductor structure is provided, wherein the method includes the following operations. A substrate having a transistor is received, wherein the transistor includes a channel region and a gate on a first side of the channel region. A second side of the channel region of the transistor is exposed, wherein the second side is opposite to the first side. A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment. A semiconductor structure and an operation of a semiconductor structure thereof are also provided.