Semiconductor Light-Emitting Device Electrode Structure Heat Dissipation
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Solution Overview
Problem
Current semiconductor light-emitting devices face challenges with heat dissipation and reliability due to the method of removing the growth substrate, leading to electrical and optical losses, particularly during high-current operations.
Innovation Solution
A semiconductor light-emitting device with a novel electrode structure featuring a laminated semiconductor structure, a support substrate, and an insulating layer to isolate the connecting electrode from the active layer and conductivity-type semiconductor layers, enhancing heat dissipation and reliability by using a light-transmissive substrate and electrodes for improved contact and light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the growth substrate is removed after epitaxial growth, then electrical connection and optical loss issues are avoided, but heat dissipation capability deteriorates and device reliability decreases during high-current operations
Solution Approach 1:
The device structure is segmented into distinct functional layers: the growth substrate is separated from the active device region, allowing independent optimization. The electrode structure is divided into a first electrode on the first surface and a second electrode on the second surface, with the connecting electrode bridging them through the substrate, enabling separate optimization of electrical connection and heat dissipation pathways.
Solution Approach 2:
The connecting electrode acts as an intermediary element that provides both electrical connection between the first and second electrodes and a thermal conduction pathway. The support substrate serves as an intermediary that mechanically supports the thin-film semiconductor structure while allowing heat to be conducted away from the active region.
2Strength
If a thick electrode structure (60 μm to 150 μm) is used to support the epitaxially grown thin-film, then mechanical support is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The support function is separated from the electrode function. The support substrate provides mechanical support for the thin-film semiconductor structure, while the electrode structures (first electrode, second electrode, and connecting electrode) provide electrical connection and heat dissipation. This segmentation allows the support substrate to be optimized for mechanical strength while the electrode structures are optimized for electrical and thermal performance.
Solution Approach 2:
Instead of increasing electrode thickness in one dimension to provide mechanical support, the solution moves the support function to a separate dimension by introducing a support substrate. The electrode structures remain thin to maintain heat dissipation capability, while the support substrate provides the necessary mechanical strength in a different structural dimension.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel electrode structure improves heat dissipation and reliability, reducing electrical and optical losses, and enhancing the device's performance and longevity, especially under high-current conditions.
Implementation Method 1
an insulating layer being disposed to insulate the connecting electrode from the active layer and the first conductivity-type semiconductor layer
Implementation Method 2
the second electrode may include a light-transmissive electrode, and the support substrate may include a light-transmissive substrate
Implementation Method 3
The novel electrode structure improves heat dissipation and reliability
Data Source
AI summary
A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.