Dielectric Injector for Plasma Uniformity

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Solution Overview

Problem

Conventional plasma processing apparatuses face challenges in achieving uniform plasma density and low electron temperature at low pressure, leading to suboptimal ion verticality, ion energy control, and uneven substrate treatment, which are critical for advanced semiconductor fabrication.

Innovation Solution

The apparatus comprises an electron source chamber, an electron-beam sustained plasma (ESP) processing chamber, and a dielectric injector with a flared input region and a parallel region, which accelerates electrons from the source chamber to the processing chamber, maintaining a plasma double layer and controlling electron temperature and ion energy, resulting in uniform plasma density and vertical ion delivery.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional plasma processing apparatuses are used, then plasma processing can be performed, but uniform plasma density and low electron temperature cannot be achieved at low pressure

Engineering Contradiction:

Improveplasma uniformityVSAvoidelectron temperature control

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The plasma processing system is divided into two separate chambers: an electron source chamber and a processing chamber, connected by a narrow aperture. This segmentation allows independent optimization of plasma generation conditions in the source chamber and processing conditions in the processing chamber, enabling uniform plasma density and low electron temperature to be achieved simultaneously at low pressure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A narrow aperture serves as an intermediary element between the electron source chamber and the processing chamber. This aperture acts as a spatial filter that transmits electrons while blocking plasma ions and neutral particles, enabling controlled electron injection into the processing chamber to generate uniform plasma with low electron temperature.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If conventional plasma processing is used, then processing can proceed, but ion verticality and ion energy control are suboptimal

Engineering Contradiction:

Improveion verticality controlVSAvoidion energy control

Core Design Contradiction:

Manufacturing precisionVSEase of operation

Solution Approach 1:

By separating the electron source chamber from the processing chamber with a narrow aperture, the system achieves independent control of ion characteristics. Electrons are generated in the source chamber and injected into the processing chamber, where they generate plasma with improved ion verticality and controllable ion energy, enhancing manufacturing precision while maintaining ease of operation.

Inventive Principle:

Principle #1Segmentation

3Manufacturing precision

If conventional plasma processing apparatuses are used, then general processing is possible, but uneven substrate treatment occurs

Engineering Contradiction:

Improvesubstrate treatment uniformityVSAvoidprocessing regime flexibility

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The two-chamber configuration with a narrow aperture enables uniform electron injection across the substrate surface, resulting in even plasma distribution and uniform substrate treatment. The segmentation allows the processing chamber to be optimized for uniformity while the source chamber provides the necessary electron flux, maintaining versatility for different processing regimes.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables precise control of plasma properties, such as ion verticality and electron temperature, facilitating high aspect ratio etches and deposition processes, improving the uniformity and precision of semiconductor processing.

Implementation Method 1

accelerating the electrons from the source chamber through a dielectric injector and into a processing chamber

Methodology Applied

Scientific EffectElectric field acceleration: Electric Field

Implementation Method 2

maintaining a plasma double layer and controlling electron temperature and ion energy

Methodology Applied

Scientific EffectPlasma double layer: Plasma

Data Source

PatentUS11152194B2Plasma processing apparatuses having a dielectric injector

Publication Date: 2021.10.19 TOKYO ELECTRON LTD

AI summary

An apparatus comprises an electron source chamber, an electron-beam sustained plasma (ESP) processing chamber, and a dielectric injector disposed between the electron source chamber and the ESP processing chamber. The dielectric injector comprises a first flared input region comprising a wide entry opening and a narrow exit opening. The wide entry opening opens into to the electron source chamber. The first flared input region is radially symmetric about a longitudinal axis of the dielectric injector. The dielectric injector further comprises a first parallel region comprising an input opening and an output opening. The input opening is adjacent to the narrow exit opening. The output opening is disposed opposite of the input opening. The first parallel region is cylindrical.