Dielectric-Insulated LED Structure for Lattice Dislocation Bypass

A dielectric material layer is introduced as an intermediary substance between the n-type GaN layer and the p-type GaN layer. This dielectric layer fills the indentations created by lattice dislocations and prevents carrier passages from forming, thereby eliminating the harmful effect of dislocations without changing the epitaxial growth process itself. The dielectric material acts as a mediator that blocks the formation of unintended carrier pathways while maintaining the simplicity of the manufacturing process.

The patent changes the material parameter from conductive/semiconductive interlayers (AlN, SiN) to a dielectric material. This parameter change fundamentally alters how the interlayer functions: instead of relying on the specific crystal structure and piezoelectric properties of AlN or SiN, the dielectric material relies on its insulating properties to block carrier passages. This simplifies the manufacturing process because the dielectric material can be deposited using standard techniques and does not require the same level of lattice matching control as AlN or SiN interlayers.

The patent extracts or removes the harmful carrier passages from the device structure by filling the indentations with dielectric material. The dielectric material is deposited conformally and then planarized, effectively extracting the unwanted carrier pathways that would otherwise allow non-radiative recombination. This approach maintains low manufacturing costs by using a straightforward deposition and planarization process rather than incorporating complex interlayer structures.