Semiconductor Dielectric Recess Layout for Misalignment Insulation
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Solution Overview
Problem
As integrated circuits (ICs) are designed at higher densities, the smaller dimensional parameters lead to increased probability of circuit parts coming into contact with each other due to manufacturing variations, resulting in device failures and yield decreases, particularly in fin field-effect transistors where the designed separation between metal and source/drain regions is critical.
Innovation Solution
The semiconductor device incorporates a first and second conductive or semiconductive region separated by a dielectric region with varying thickness, where the second dielectric region is deposited at an oblique angle to ensure adequate insulation, and a conductive material is deposited in recesses formed in the dielectric material, allowing for oblique interfaces that maintain insulation even with misalignment during fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If dimensional parameters are decreased to achieve higher device density, then device density is improved, but the probability of circuit parts coming into contact increases due to manufacturing variations
Solution Approach 1:
The patent applies local quality by creating a dielectric region with varying thickness, where the thickness is locally increased in critical areas between conductive regions. This localized thickening provides enhanced insulation precisely where manufacturing variations pose the greatest risk of contact, while maintaining smaller dimensions in non-critical areas to preserve high device density.
Solution Approach 2:
The patent resolves the contradiction by transitioning from uniform two-dimensional spacing to three-dimensional varied thickness profiling. The dielectric region's thickness varies in the vertical dimension, creating oblique interfaces that provide additional insulation margin without increasing the lateral footprint, thereby maintaining high device density while improving reliability.
2Quantity of substance
If dimensional parameters are decreased to achieve higher device density, then device density is improved, but manufacturing precision requirements become more stringent
Solution Approach 1:
The patent implements beforehand cushioning by pre-establishing a dielectric region with varying thickness that provides a built-in safety margin against manufacturing variations. The oblique interfaces and locally increased thickness act as a cushion that absorbs alignment errors and dimensional variations, reducing the stringency of manufacturing precision requirements while enabling high device density.
3Ease of manufacture
If uniform dielectric thickness is used, then manufacturing is simpler, but adequate insulation cannot be maintained with smaller dimensional parameters
Solution Approach 1:
The patent resolves this contradiction by implementing local quality through a dielectric region with spatially varying thickness. The thickness is locally increased in areas where insulation is critical, providing enhanced reliability, while the overall structure remains compatible with standard deposition processes, maintaining reasonable ease of manufacture.
Solution Approach 2:
The patent applies dynamics by transitioning from a static uniform dielectric thickness to a dynamic varied thickness profile. The dielectric thickness adapts to local requirements, being thicker where insulation is critical and thinner where it is not, allowing adequate insulation to be maintained with smaller dimensional parameters while using modified but still practical manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains adequate insulation between conductive regions, reducing the likelihood of device failures and yield drops by ensuring the minimum separation is maintained despite manufacturing variability, thus enabling high-density ICs with improved reliability.
Implementation Method 1
a dielectric region separating the first and second conductive or semiconductive regions
Implementation Method 2
depositing a second dielectric material in the recess
Implementation Method 3
depositing a conductive material in the recess
Data Source
AI summary
In some embodiments, a method of making a semiconductor device includes forming a recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a semiconductor region, the recess having a first surface portion separated by a distance in a first direction from the semiconductor region by a portion of the first dielectric material; depositing a second dielectric material in the recess to form a second surface portion oriented at an oblique angle from the first surface portion; and depositing a conductive material in the recess. In some embodiments, the method further includes partially exposing the semiconductor region in a second recess in the first dielectric material and selectively depositing the second dielectric material on the first dielectric material, but not the semiconductor region, in the second recess.