Dielectric Recess Profile Control for Strain Engineering
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Solution Overview
Problem
In semiconductor devices, controlling the strain on channel regions is challenging due to the dependence on the depth and shape of recesses for epitaxial source/drain regions, which affects device performance and current characteristics.
Innovation Solution
A method is introduced where a dielectric material is formed within recesses adjacent to the channel region, with selective etching to position it along the sidewalls, thereby controlling the volume and shape of the strain-inducing material in epitaxial source/drain regions, reducing strain on the channel region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the depth and shape of recesses for epitaxial source/drain regions are increased to induce more strain on the channel region, then the strain effect and current characteristics are improved, but the device complexity and manufacturing precision requirements increase
Solution Approach 1:
A dielectric material is introduced as an intermediary substance within the recesses to control and modulate the strain effect. This dielectric material acts as a mediator between the epitaxial source/drain regions and the channel, allowing precise control over the strain profile without directly modifying the recess geometry, thereby reducing manufacturing complexity while maintaining device performance
Solution Approach 2:
The invention changes the physical and chemical parameters of the recess environment by introducing dielectric material with specific properties (permittivity, mechanical properties). This allows control over the strain field in the channel region by adjusting dielectric material parameters rather than precisely controlling recess depth and shape, simplifying the manufacturing process
2Productivity
If the volume of strain-inducing material in epitaxial source/drain regions is increased to enhance current characteristics, then saturation current and on/off currents are improved, but the manufacturing precision and control difficulty increase
Solution Approach 1:
The dielectric material serves as an intermediary that controls the effective volume and distribution of strain-inducing material. By adjusting the dielectric material's presence and properties, the strain effect can be optimized without directly controlling the complex three-dimensional shape and volume of epitaxial growth regions, thereby reducing manufacturing precision requirements
Solution Approach 2:
The dielectric material is selectively placed in specific locations within the recesses to create local variations in strain distribution. This allows optimization of current characteristics in specific regions without requiring uniform precision control over the entire epitaxial structure, simplifying the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows precise control over strain on the channel region, enhancing device performance by optimizing current characteristics such as saturation current and on/off currents without increasing the transistor footprint.
Implementation Method 1
A dielectric material is arranged within the recesses in the semiconductor body at a position laterally between the strain inducing material of the epitaxial source/drain regions and the channel region
Implementation Method 2
The epitaxial source/drain regions comprise a strain inducing material configured to induce a strain on the channel region
Data Source
AI summary
The present disclosure relates to a semiconductor device that controls a strain on a channel region by forming a dielectric material in recesses, adjacent to a channel region, in order to provide control over a volume and shape of a strain inducing material of epitaxial source/drain regions formed within the recesses. In some embodiments, the semiconductor device has epitaxial source/drain regions arranged in recesses within an upper surface of a semiconductor body on opposing sides of a channel region. A gate structure is arranged over the channel region, and a dielectric material is arranged laterally between the epitaxial source/drain regions and the channel region. The dielectric material consumes some volume of the recesses, thereby reducing a volume of strain inducing material in epitaxial source/drain regions formed in the recesses.