Semiconductor Devices TRIZ Cases

A semiconductor light receiving element uses a concave reflecting portion on the back surface to guide incident light toward the absorption region.

Segmented edge termination with lower doping minimizes chip area while maintaining breakdown voltage to cut switching losses.

An intermediate AlGaAs layer with 0.3 to 0.5 aluminum composition blocks gold atom migration from Au-containing electrodes, preventing on-resistance spikes.

Surface protrusions on a gallium nitride substrate reduce dislocation density to 5×10^6/cm², mitigating current concentration droop at high currents.

Segmenting the second impurity region into distinct zones optimizes breakdown voltage while suppressing increases in electric resistance and leak current.

Segmented field plate tracks control voltage gradients to boost breakdown voltage and reduce sensitivity to outer charges.

Selective n-type doping beneath the anode reduces onset voltage and conduction loss in GaN Schottky diodes without sacrificing breakdown voltage.

A pillar structure reduces base resistance to prevent parasitic bipolar activation and latch-up conditions during turn-off.

An insulating spacer on a recess sidewall improves electrode connectivity without reducing the effective light emitting area.

A semiconductor light emitting device uses a nitrogen-containing layer on a silver reflecting electrode to suppress migration.

Graded aluminum composition in quantum wells confines electrons to the active area, preventing overflow and boosting red-light LED brightness.

Varying acceptor concentration in a nitride superlattice layer enhances activation rates and suppresses leakage current caused by deep levels.

Replacing opaque metal contacts with a transparent conductive oxide layer reduces reverse recovery time and increases active area ratio.

Segmenting the LED from a diffusing member resolves the trade-off between high extraction efficiency and suitable indoor illumination patterns.

A gate spacer extends onto an isolation region to block leakage current paths between source and drain regions.

A semiconductor device design differentiates IGBT current capability by position to enhance short circuit resilience.

Barrier structures extend into the drift zone to physically block crystal defects in silicon carbide semiconductor components.

Structured sacrificial layer guides laser or plasma streams to divide semiconductor substrates into precise chip geometries.

Insulating substrate with conductive plugs electrically couples flip chip LEDs, preventing reverse current and short circuits caused by close proximity.

Varying phosphor thickness on LED surfaces compensates for angular light mixing variations to maintain consistent color distribution.

A trench-gate IGBT structure uses segmented trenches to adjust gate capacitance independently from cell performance.

Segmented phosphor layers reduce chip absorption and improve light extraction efficiency.

Varying dopant ratios in corner versus straight sections of a semiconductor edge construction improves blocking capability without expanding active chip area.

Variable conductive layer width dissipates high electric fields at source regions, increasing breakdown voltage and reducing leakage current.

A light-emitting element adjusts second conductive layer width to improve current spreading.

A semiconductor device uses a punch-through prevention region with higher impurity concentration to block drain-to-substrate leakage paths.

A field plate structure distributes electric field stress across the substrate between gate and drain regions in lateral double-diffused transistors.

A silicon-rich AlGaN intermediate layer inhibits threading dislocation propagation to boost light output despite added structural complexity.

Segmented gate doping reduces gate-to-drain capacitance without increasing on-resistance, improving switching speed in high voltage devices.

A segmented gate stack structure with distinct P-type and N-type work function adjustment layers increases the tuning range of MOS varactors.

Asymmetric recessed source and drain regions reduce gate-to-drain capacitance while lowering source resistance for higher stable gain.

A double RESURF semiconductor device uses a unified mask to form the upper RESURF and body regions simultaneously.

A polymer layer acts as both a bonding agent and an exposure mask for the second type semiconductor layer, eliminating separate photolithography steps.

Magnesium oxide and nitride passivation replaces oxygen bonds on etched LED chip side surfaces, reducing nonradiative recombinations that lower efficiency.

Varying bandgap energies maintains the base-collector junction in reverse bias, reducing capacitance and negative feedback for improved RF performance.

A semiconductor light emitting device uses a recessed current diffusion layer to increase lateral current spread and reduce optical absorption.

An uneven inner surface on the insulator wall increases bonding area to prevent component bringing-back and improve mounting yield.

Inclined concave lens geometry reduces silicone volume while maintaining high light extraction efficiency for cost effective wafer level packaging.

Alternating inter-trench surface regions guide current paths to reduce on-resistance while preventing uneven distribution during turn-off.

Segmenting base layers with distinct germanium content and dopant profiles across a single substrate.

Heterogeneous substrate patterning under non-translucent electrodes suppresses driving voltage increases caused by high threading dislocation density.

A SiC substrate supports an epitaxial AlGaN structure to enhance carrier concentration and reduce ON-resistance in semiconductor devices.

Replacing silicon nitride with a high-k composite charge storage region increases trap density, resolving data retention limits in thinner layers.

Graphene layers in SiC drift zones lower current path resistance, reducing specific on-state resistance for high-voltage applications.

Dielectric material in recesses controls epitaxial source/drain volume, reducing manufacturing precision requirements while maintaining device performance.

Segmenting a semiconductor heterojunction into specific facets overcomes the trade-off between device complexity and facet-dependent electrical properties.

Variable temperature photoresist reflow creates smooth tilted mesa sidewalls, reducing surface leakage current in ultraviolet detectors.