Power Semiconductor Edge Termination Field Plate Structure
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Solution Overview
Problem
Power semiconductor devices face challenges in achieving robust blocking characteristics and high breakdown voltage, particularly in the edge termination region, where the electrical potential distribution is not effectively managed, leading to sensitivity to outer charges and voltage changes.
Innovation Solution
A power semiconductor device with an edge termination region featuring a field plate structure comprising multiple electrically conductive tracks that form crossings with a virtual line, where the potential difference between adjacent crossings increases significantly along the length, and the potential near the active region is limited, ensuring a controlled voltage course and high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional edge termination region is used, then the device structure is simple, but the breakdown voltage is low and the device is sensitive to outer charges
Solution Approach 1:
The edge termination region is segmented into multiple zones with different doping concentrations (first, second, and third doping concentrations). This segmentation creates distinct potential wells that control the electric field distribution, thereby increasing breakdown voltage and reducing sensitivity to outer charges while maintaining a manageable structural complexity through systematic zoning.
Solution Approach 2:
Different regions of the edge termination structure are assigned different doping concentrations and geometrical configurations. The first, second, and third doping concentrations are locally optimized to create specific electric field characteristics in different zones, allowing the structure to achieve high breakdown voltage without uniformly increasing complexity throughout the entire device.
2Reliability
If the edge termination region is optimized for high breakdown voltage, then the blocking characteristics improve, but the manufacturing process becomes more complex
Solution Approach 1:
The doping profile is designed and implemented in advance during the manufacturing process, with specific first, second, and third doping concentrations predetermined to achieve the desired blocking characteristics. This preliminary design of the doping profile allows the complex blocking performance to be achieved through standard semiconductor fabrication techniques rather than requiring complex post-manufacturing adjustments.
3Object-affected harmful factors
If the potential distribution in the edge termination region is not controlled, then the device structure remains simple, but the device is sensitive to voltage changes and outer charges
Solution Approach 1:
The edge termination region is designed with multiple doping zones that create equipotential regions and controlled potential gradients. The first, second, and third doping concentrations are configured to establish specific potential wells that reduce the electric field at critical locations, thereby decreasing sensitivity to outer charges and voltage changes while maintaining reasonable structural complexity through systematic potential management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively enhances the breakdown voltage and insensitivity to outer charges by managing the potential distribution in the edge termination region, allowing for quick voltage changes and reliable operation.
Implementation Method 1
the difference in potential between adjacent two of then crossings increases in at least 50% or in at least 60% or in at least 80% of the length of the virtual line, and/or wherein, e.g., in said forward biased blocking state of the power semiconductor device, the difference in potential within, with respect to the active region, the first 20% of the length of virtual line is less than 10% of the total difference in potential along the virtual line
Data Source
AI summary
A power semiconductor device includes an active region and an edge termination region surrounding the active region. A field plate structure arranged around the active region includes at least one electrically conductive track electrically connected to a first potential of a first load terminal at a first joint and, at a second joint, electrically connected to a second potential of a second load terminal. The track forms at least n crossings, wherein n is greater 5, with a straight virtual line that extends from the active region towards an edge of the edge termination region. The difference in potential between adjacent two crossings increases in at least 50% of the length of the virtual line, and/or the difference in potential within, with respect to the active region, the first 20% of the length of virtual line is less than 10% of the total difference in potential along the virtual line.