Semiconductor Light Emitting Device Recess Insulating Spacer
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in achieving high light emitting efficiency due to limitations in the design of the recess structure and contact areas, which affect the effective light emitting area and electrode connectivity.
Innovation Solution
A semiconductor light emitting device design featuring a multilayer semiconductor body with a recess exposing a conductivity-type semiconductor layer, an insulating spacer on the internal sidewall of the recess, and electrodes connected through openings in the semiconductor layers, ensuring a continuous surface without angular points and increased contact area, enhancing light emitting efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a recess structure is used to improve electrode connectivity, then the contact area between electrodes and semiconductor layers is improved, but the effective light emitting area is reduced
Solution Approach 1:
The patent transitions from planar contact to three-dimensional conformal contact by coating the insulating layer on the internal sidewall of the recess. This vertical dimension utilization allows electrode connectivity improvement without sacrificing horizontal light emitting area, as the conformal coating follows the recess geometry rather than requiring additional lateral space.
Solution Approach 2:
The insulating layer is selectively applied only on the internal sidewall of the recess through conformal coating, creating a localized insulating structure precisely where needed for electrode connectivity. This local application maintains the overall light emitting area while providing targeted functional improvement at the recess region.
2Productivity
If the recess area is reduced to improve light emitting efficiency, then the effective light emitting area is improved, but electrode connectivity may be compromised
Solution Approach 1:
By utilizing the vertical sidewall surface of the recess through conformal coating, the patent enables adequate insulating coverage and electrode connectivity even when the recess footprint is minimized. This vertical surface utilization decouples the relationship between recess area and connectivity quality, allowing smaller recesses to maintain reliable electrode contact.
Solution Approach 2:
The conformal insulating layer is formed on the recess sidewall before electrode deposition, preliminarily establishing the connectivity pathway and insulating structure. This preliminary action ensures that subsequent electrode formation occurs on a pre-prepared surface that guarantees both connectivity and insulation, even in reduced-area recess configurations.
3Reliability
If an insulating layer is added on the internal sidewall of the recess, then insulation performance is improved, but device complexity increases
Solution Approach 1:
The conformal coating process automatically forms the insulating layer to follow the precise geometry of the recess sidewall, with the coating process itself serving to create the exact shape needed. This self-adaptive formation eliminates the need for additional patterning steps or complex alignment procedures, improving insulation performance without proportionally increasing manufacturing complexity.
Solution Approach 2:
The conformal insulating layer on the recess sidewall serves multiple functions simultaneously: providing electrical insulation between adjacent structures, defining the recess boundary, and serving as a foundation for electrode deposition. This multi-functionality achieves improved insulation performance without adding separate dedicated structures, thereby limiting the increase in device complexity.
Data Source
AI summary
A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.