Dielectric Layer Stack for Directional Wavelength-Converted Emitters
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Solution Overview
Problem
Current radiation-emitting semiconductor components face challenges in achieving efficient directional radiation and compact design while maintaining high transmittance for specific peak wavelengths, with existing dielectric layer stacks failing to optimize angular ranges for electromagnetic radiation.
Innovation Solution
A radiation-emitting semiconductor component comprising a semiconductor chip with a pn junction, a conversion element with phosphor particles, and a dielectric layer stack that selectively transmits and reflects electromagnetic radiation based on wavelength and angle of incidence, using a reflective potting body and optical elements to enhance directional radiation and compactness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a dielectric layer stack is added to optimize angular ranges for electromagnetic radiation, then directional radiation efficiency is improved, but device complexity increases
Solution Approach 1:
The dielectric layer stack is segmented into multiple individual dielectric layers, each with specific refractive indices and thicknesses. This segmentation allows independent optimization of each layer's properties to achieve desired angular transmission characteristics while maintaining manageable complexity through modular design
Solution Approach 2:
The patent optimizes specific parameters of the dielectric layers including refractive index values and thicknesses to control the transmission and reflection of electromagnetic radiation at different angles. By carefully selecting and adjusting these parameters, the system achieves high directional radiation efficiency without requiring excessive structural complexity
2Volume of moving object
If the semiconductor component is designed for compact size, then volume is reduced, but achieving high transmittance for specific peak wavelengths becomes more difficult
Solution Approach 1:
The dielectric layer stack is integrated directly onto the semiconductor chip structure, with layers nested in sequence. This nesting approach allows multiple functional layers to be stacked vertically within a compact footprint, achieving high transmittance for specific wavelengths without increasing the overall component volume
Solution Approach 2:
The patent utilizes the vertical dimension by stacking dielectric layers perpendicular to the chip surface. This dimensional approach allows optimization of optical properties through layer thickness and refractive index variations without expanding the lateral dimensions, thus maintaining compact component volume while achieving reliable transmittance performance
3Ease of manufacture
If existing dielectric layer stacks are used, then manufacturing is simpler, but optimization of angular ranges for electromagnetic radiation is insufficient
Solution Approach 1:
The patent employs standard dielectric materials with well-known refractive indices and applies conventional thin-film deposition techniques. By selecting parameters such as layer thicknesses and material compositions that align with existing manufacturing capabilities, the design achieves optimized angular ranges without sacrificing manufacturing simplicity
Solution Approach 2:
The dielectric layers are designed with uniform material composition and consistent thickness within each layer, using standard deposition processes. This homogeneity ensures reproducible optical performance across production batches while maintaining ease of manufacture through established fabrication techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high efficiency in electromagnetic radiation transmission for specific angular ranges, enabling compact and directional radiation-emitting semiconductor components, particularly suitable for light sources like automotive headlights and projectors.
Implementation Method 1
a dielectric layer stack that selectively transmits and reflects electromagnetic radiation based on wavelength and angle of incidence
Implementation Method 2
a dielectric layer stack that selectively transmits and reflects electromagnetic radiation based on wavelength and angle of incidence
Implementation Method 3
a conversion element with phosphor particles
Implementation Method 4
The conversion element has, for example, a main extension plane. A vertical direction is oriented perpendicular to the main extension plane
Data Source
AI summary
In an embodiment a radiation-emitting semiconductor component includes a radiation-emitting semiconductor chip configured to emit electromagnetic radiation with a first peak wavelength, a conversion element configured to emit electromagnetic radiation with a second peak wavelength and a dielectric layer stack arranged on the radiation-emitting semiconductor chip and the conversion element, wherein a transmittance of the dielectric layer stack for the electromagnetic radiation with the first peak wavelength and for the electromagnetic radiation with the second peak wavelength in a first angular range is greater than a threshold value, and wherein the transmittance of the dielectric layer stack for the electromagnetic radiation with the first peak wavelength and for the electromagnetic radiation with the second peak wavelength in a second angular range is less than the threshold value.