3D Memory Leakage Reduction via Dielectric Support Pillars
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Solution Overview
Problem
Three-dimensional memory devices face issues with interlevel leakage current due to support pillar structures, which are exacerbated by the replacement of sacrificial material layers with electrically conductive layers, affecting the yield and reliability of these devices.
Innovation Solution
The implementation of a three-dimensional memory device structure that includes alternating stacks of insulating and sacrificial material layers, where memory stack structures and support pillar structures are formed with dielectric cores and fill materials, reducing interlevel leakage by laterally spacing the support pillars from the memory stacks and using dielectric materials to minimize electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If semiconductor materials are employed to provide support pillar structures, then structural support is provided, but leakage paths are created among electrically conductive lines
Solution Approach 1:
The patent extracts the semiconductor material from the support pillar structures, removing the harmful leakage paths while maintaining structural support through alternative dielectric materials. The support pillars are formed using dielectric materials deposited over the alternating stack, eliminating direct semiconductor contact that causes interlevel leakage.
Solution Approach 2:
The patent introduces dielectric materials as intermediary structures between the alternating stack and electrically conductive lines. These dielectric support pillars act as mediators that provide mechanical support while preventing electrical leakage, isolating the conductive lines from direct contact with semiconductor regions.
2Adaptability or versatility
If sacrificial material layers are replaced with electrically conductive layers, then device functionality is enhanced, but interlevel leakage is exacerbated
Solution Approach 1:
The patent removes sacrificial material layers completely from regions where support pillars will be formed, replacing them with dielectric materials that do not create leakage paths. This extraction eliminates the source of interlevel leakage while preserving device functionality through proper dielectric layer deposition.
Solution Approach 2:
The patent applies different material qualities to different regions: dielectric materials are used specifically in support pillar regions to prevent leakage, while electrically conductive layers are maintained in memory stack regions for functionality. This local differentiation resolves the contradiction by providing functionality where needed while preventing leakage where harmful.
3Productivity
If support pillars are placed close to memory stacks, then device density is increased, but leakage paths are created
Solution Approach 1:
The patent uses dielectric materials as intermediary support pillars that can be placed close to memory stacks without creating leakage paths. These dielectric intermediaries provide the necessary structural support at high density while maintaining electrical isolation, allowing close spacing without the harmful effects of semiconductor-based support pillars.
Data Source
AI summary
Memory openings and support openings can be formed through an alternating stack of insulating layers and sacrificial material layers. A set of dielectric layers and at least one semiconductor material layer can be sequentially deposited in each of the memory openings and the support openings. The at least one semiconductor material layer is removed from inside the support openings, while the at least one semiconductor material layer is not removed from inside the memory openings. Memory stack structures and support pillar structures are formed in the memory openings and the support openings, respectively. The sacrificial material layers are replaced with electrically conductive layers. Removal of the at least one semiconductor material layer from the support pillar structures reduces or eliminates leakage current through the support pillar structures.