Dielectric Via Liner for Rough Through-Glass Via Sidewalls

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Solution Overview

Problem

Laser-assisted etching processes in glass cores result in via openings with significant surface roughness, exceeding 100 nm RMS and Ra, which adversely affect the electrical performance of conductive structures.

Innovation Solution

Applying a dielectric film liner over the sidewalls of via openings using conformal deposition methods like ALD, CVD, or PVD to fill the topography and reduce surface roughness to 50 nm or less.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If laser assisted etching process is used to create via openings in glass core, then via openings can be formed through the glass substrate, but the sidewalls of the via openings exhibit high surface roughness (RMS 100 nm or greater)

Engineering Contradiction:
Improvevia opening formationVSAvoidsidewall surface roughness
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

A dielectric film is deposited as an intermediary layer over the rough sidewalls of the via openings. This dielectric film acts as a mediator that fills in the rough topography and provides a smooth surface for subsequent conductor material deposition, thereby resolving the contradiction between ease of via formation and manufacturing precision of sidewall surface

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The dielectric film is deposited in advance before the conductor material is placed in the via openings. This preliminary action of smoothing the sidewalls with the dielectric film ensures that when conductor material is subsequently deposited, it forms on a smooth surface, achieving low surface roughness without compromising the ease of via opening formation

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If conformal deposition of dielectric film is applied to smooth sidewalls, then surface roughness is reduced to 50 nm or less, but additional process steps are required

Engineering Contradiction:
Improvesidewall surface roughnessVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The dielectric film serves multiple functions: it smooths the rough sidewall surface, provides adhesion between the glass substrate and conductor material, and acts as a barrier layer. By combining multiple functions into a single layer, the solution reduces surface roughness without proportionally increasing device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dielectric film liner significantly reduces surface roughness, improving the electrical properties of conductive structures within glass cores by smoothing the sidewalls and enhancing adhesion and thermal expansion compatibility.

Implementation Method 1

Applying a dielectric film liner over the sidewalls of via openings using conformal deposition methods like ALD, CVD, or PVD

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

Applying a dielectric film liner over the sidewalls of via openings using conformal deposition methods like ALD, CVD, or PVD

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS20250343114A1Dielectric film coating for through glass vias and plane surface roughness mitigation
Publication Date: 2025.11.06 INTEL CORP
  • US20250343114A1 patent drawing
  • US20250343114A1 patent drawing
  • US20250343114A1 patent drawing

AI summary

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a substrate with a first surface and a second surface, where the substrate comprises glass. In an embodiment, the electronic package further comprises a via opening through the substrate, where sidewalls of the via opening have a root mean squared (RMS) surface roughness that is approximately 100 nm or greater. In an embodiment, the electronic package further comprises a liner over the sidewalls of the via opening, where an RMS surface roughness of the liner is approximately 50 nm or smaller. An electronic package may further comprise a via through the via opening.