Dielectric Window Magnetic Groove for Plasma Uniformity
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Solution Overview
Problem
Current plasma processes in semiconductor manufacturing face challenges in achieving uniform plasma density and distribution, leading to inefficiencies in throughput and reliability of semiconductor devices.
Innovation Solution
A dielectric window with a magnetic-field control groove is introduced, which optimizes the distribution of magnetic fields within the plasma chamber by adjusting the position, size, and depth of the groove, enhancing plasma uniformity and density through the use of a coil antenna with inner and outer coils and RF power supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional dielectric window is used in the plasma chamber, then the structure is simple and easy to manufacture, but the plasma density distribution is non-uniform and plasma uniformity is poor
Solution Approach 1:
The dielectric window incorporates a magnetic field control groove at a specific location (outer surface) to locally modify magnetic field distribution. This localized structural modification allows the groove to specifically address plasma uniformity issues in certain regions without requiring complete redesign of the entire dielectric window structure.
Solution Approach 2:
The magnetic field control groove modifies physical parameters (magnetic field strength and distribution) in the plasma chamber by creating a localized structural feature on the dielectric window. This parameter change enables improved plasma uniformity through controlled magnetic field interaction.
2Reliability
If the plasma chamber uses a simple outer wall structure, then the manufacturing is easier, but the plasma density and uniformity cannot be optimized
Solution Approach 1:
Rather than redesigning the entire chamber structure, the invention applies a localized magnetic field control groove to the dielectric window. This localized approach achieves plasma optimization without requiring complex modifications to the overall chamber fabrication process.
3Productivity
If no magnetic field control structure is added, then the device complexity is low, but the throughput and plasma uniformity are insufficient for efficient semiconductor fabrication
Solution Approach 1:
The magnetic field control groove changes the magnetic field parameters in the plasma chamber, which directly influences plasma uniformity and density. These parameter changes lead to improved semiconductor fabrication throughput by enabling more consistent plasma processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves plasma uniformity and density, resulting in a stable plasma process that enhances the reliability and efficiency of semiconductor device fabrication.
Implementation Method 1
a coil antenna over the outer surface of the dielectric window, the coil antenna including an inner coil and an outer coil, and a radio-frequency (RF) power device configured to supply RF power to the coil antenna
Implementation Method 2
the dielectric window defining a magnetic-field control groove in the second surface thereof
Data Source
AI summary
A plasma process apparatus including a process chamber defined by an outer wall and a dielectric window, the dielectric window including a first dielectric material and covering an upper portion of the outer wall, the dielectric window including a top surface facing outside of the process chamber and a bottom surface facing insider of the process chamber, the dielectric window further including at least one magnetic-field control groove at the top surface of the dielectric window, and a coil antenna over the dielectric window and configured to receive RF power, the coil antenna including an inner coil and an outer coil, the inner coil over a center of the dielectric window, the outer coil over an edge of the dielectric window and surrounding the inner coil may be provided.