Electric Discharge Tubes TRIZ Cases

A process control device integrates plasma emission intensity over time to calculate total light output during dry etching.

Dispersing sodium compound phases under 10 μm in a sintered body suppresses discoloration and abnormal discharge while maintaining mechanical strength.

Gap-free antenna conductor attachment to an insulating lid prevents plasma discharge.

A plasma dicing process uses alternating etching and deposition steps to form grooves with varying scallop pitches on semiconductor substrates.

An off-axis lift-and-rotation unit moves substrates during deposition to average plasma and gas flow asymmetries.

Real-time monitoring detects material transitions in multilayer stacks, triggering dynamic ion beam adjustments that reduce sidewall damage and mask erosion.

Solid state detectors capture thermal radiation for contactless temperature measurement, preventing material diffusion and preserving vacuum integrity.

An intermediary impedance control module analyzes reflected radiofrequency signals to determine chamber impedance without perturbing the plasma process.

Permanent magnets in a donut antenna create a magnetic field that governs electron movement to resolve non-axisymmetric plasma distribution.

A crossover-forming deflector array directs secondary electron beams to reduce cross-talk and enhance detection precision on semiconductor wafers.

A multibeamlet charged particle device uses a reconfigurable blanking circuit to select and initialize beamlets for target irradiation.

A plasma processing method applies a low frequency bias power to the mounting table before applying DC voltage to the electrostatic chuck.

A cylindrical sputtering target assembly disperses particles from piece-bonding areas to improve film formation yield.

Dynamic frame region assignment allows normal beams to bypass defective ones, maintaining inspection accuracy without halting production.

Removing the hardmask layer before etching prevents native oxide accumulation on conductive structures, maintaining electrical performance.

A dual-chamber substrate processing apparatus segments silicon deposition and nitrogen treatment into separate process chambers.

A semiconductor apparatus calculates compensation values based on sputtering target usage to adjust process conditions.

A rotating crucible head assigns dedicated shafts to each crucible for independent material handling in electron beam physical vapor deposition systems.

A microfluidic cell system uses electrochemical impedance spectroscopy to detect local proton concentrations during electron beam scanning.

A plasma arcing detection probe scales analog signals to identify electrical faults in processing chambers.

Segmenting the vacuum environment into high and low zones eliminates thousands of electrical feedthroughs, allowing e-beam fault analysis on active ICs.

Metal mesh cage confines plasma to boost deposition rates and achieve uniform coating on dielectric surfaces without repositioning parts.

Merging scanner and focusing coils into one assembly reduces beamline length while minimizing eddy-current losses in ion implantation systems.

External logic circuits convert irradiation time into binary steps to resolve blanking plate space restrictions and crosstalk.

A multi-beam particle microscope adjusts pixel and beam pitch sizes based on sample feature dimensions to optimize imaging parameters.

Line memory circuits collectively write signal voltages for multiple scan lines, eliminating redundant rewriting overhead to extend the light emission period.

A method measures radio frequency voltage amplitude and self-polarization voltage to determine nanopowder surface radius and particle density.

Periodic plasma switching reduces cumulative damage on insulating films while maintaining gap-filling capacity in high-density plasma chemical vapor deposition.

Extraction plate directs plasma beam at non-zero angle to substrate, preventing material redeposition during non-volatile metal etching.

Tilting the substrate support compensates for radial non-uniformity in large area coatings, reducing thickness variation from 0.29% to 0.18%.

A Faraday shield with segmented zones and a band ring decouples magnetic flux control between inner and outer coil regions.

Control device acquires correction values to translate the stage and maintain irradiation position during multi-axis sample rotation.

Purge structure supplies gas through holes beneath the substrate to reduce particle accumulation and parasitic oxide formation.

A DC voltage applying unit shapes the ion energy distribution on a susceptor to improve processing controllability.

Positioning an in-lens deflector closer to the objective lens coil than the aperture reduces deflection coma aberration during wide field-of-view scanning.

Magnetic-field control grooves on a dielectric window adjust plasma density and uniformity in semiconductor fabrication chambers.

Adjusting inert gas flow rates during deposition reduces halogen incorporation in metal nitride films, lowering electrical resistivity for transistor gates.

Applying a time-varying DC voltage to an upper electrode controls the balance between etching and deposition rates in a single step.

A sliding plate member restrains an interchangeable connector in a power adapter, preventing insecure coupling and ensuring reliable electrical engagement.

Temperature controlling gas flows through a dedicated path along the outer wall to maintain uniform temperature distribution and plasma density.

Nitrogen plasma conditioning embeds species in polymer surfaces, preventing metal layer peeling during semiconductor deposition.

Micro arc plasma oxidation forms insulating layer on liner to prevent high voltage arcing and substrate contamination.

Segmented annulus projections and rotatable mounting members limit radial movement to prevent misalignment and contamination in plasma systems.

Segmented distribution members in a PVD feeding structure reduce impedance and eliminate offset power introduction for uniform film thickness.

Asymmetric grounding pin placement prevents short circuits from backwards insertion while maintaining reliable signal grounding.

Embedded Faraday shield channels circulate coolant to reduce mechanical stress on dielectric windows, minimizing noise from high-velocity air flow.

Nested insulating spaces in stacked metal plates enable a large temperature gradient exceeding 20°C while preventing thermal stress damage.

Rotating electrode expands plasma region to increase gas conversion rate.