Dual-Chamber Substrate Processing Apparatus for Film Uniformity
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Solution Overview
Problem
The miniaturization of semiconductor devices requires improved substrate processing techniques to enhance film characteristics post-plasma processing, as existing methods are inadequate in achieving desired film modifications and uniformity.
Innovation Solution
A substrate processing apparatus with multiple process chambers and gas supply units, utilizing capacitive and inductive coupled plasma to modify film characteristics, includes a first process chamber for forming a silicon-containing layer and a second process chamber for treating the film with activated gases to improve nitrogen incorporation and remove impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single process chamber is used for plasma processing, then the device complexity is reduced, but the manufacturing precision of film characteristics deteriorates
Solution Approach 1:
The processing system is divided into two separate process chambers: a first process chamber for forming a silicon-containing layer using silane plasma, and a second process chamber for treating the film with nitrogen-containing gas plasma. This segmentation allows each chamber to be optimized for its specific function, achieving precise control over film composition and characteristics that cannot be obtained in a single chamber system.
2Manufacturing precision
If plasma processing is performed to modify film characteristics, then the film characteristics are improved, but impurities remain in the film
Solution Approach 1:
The system performs continuous plasma processing without breaking vacuum, transitioning the substrate directly from the first process chamber to the second process chamber. The plasma treatment in the second chamber continuously modifies the film characteristics and simultaneously removes impurities through prolonged exposure to activated nitrogen-containing gas, ensuring both improvement of film properties and elimination of contaminants.
3Productivity
If miniaturization of semiconductor devices is pursued, then the integration density is improved, but the processing uniformity deteriorates
Solution Approach 1:
The system changes the parameters of plasma processing by using different gas compositions (silane-based in the first chamber, nitrogen-containing in the second chamber) and different plasma conditions in each process chamber. This allows optimization of processing uniformity for miniaturized structures through precise control of plasma chemistry and physical parameters, enabling high integration density while maintaining uniform film characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-quality insulating films with improved thickness, distribution, and nitrogen incorporation, while reducing impurities and enhancing processing uniformity and step coverage, thereby supporting the miniaturization of semiconductor devices.
Implementation Method 1
a first electrode provided in the first process chamber to face the substrate support unit... perform the first process by supplying the second gas activated by the first electrode
Implementation Method 2
a second electrode provided at a side wall of the second process chamber... perform the second process by supplying the third gas activated by the second electrode
Data Source
AI summary
A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).