Plasma Processing Apparatus Temperature Control Gas Flow Path
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Solution Overview
Problem
In semiconductor manufacturing, plasma processing uniformity is compromised due to non-uniform temperature distributions in the processing container, affecting both the surface being processed and multiple objects processed sequentially, leading to inconsistent plasma processing rates and degrees.
Innovation Solution
A plasma processing apparatus with a gas flow path for temperature controlling gas along the outer wall of the processing container, featuring evenly spaced gas introduction holes and a controlled exhaust system to maintain uniform temperature and plasma density, ensuring consistent processing across the surface and between objects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processing is performed in a conventional processing container without temperature control, then the processing can be completed, but the temperature distribution becomes non-uniform causing poor plasma processing uniformity
Solution Approach 1:
The temperature control system is segmented into multiple independent heating zones along the processing container, with each zone having its own heating element and control mechanism. This allows independent temperature adjustment in different regions to achieve uniform overall temperature distribution, resolving the contradiction between maintaining processing functionality and achieving temperature uniformity for plasma processing consistency.
Solution Approach 2:
The system dynamically adjusts heating parameters (power, duration) in different zones based on real-time temperature feedback to maintain uniform temperature distribution. By changing thermal parameters spatially and temporally, the system compensates for heat loss variations and achieves consistent plasma processing conditions throughout the container.
2Productivity
If sequential batch processing is performed on multiple objects, then productivity is maintained, but temperature variations accumulate causing inconsistent plasma processing between objects
Solution Approach 1:
The system incorporates temperature sensors and control mechanisms that continuously monitor and adjust heating parameters during sequential batch processing. Feedback from temperature measurements allows real-time compensation for heat accumulation or loss between processing cycles, ensuring each object receives consistent plasma processing conditions despite being processed sequentially, thus maintaining both productivity and precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of plasma processing on semiconductor surfaces and between objects, maintaining consistent processing conditions and preventing temperature-related variations during sequential processing.
Implementation Method 1
a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container
Implementation Method 2
a plasma generating unit installed outside the processing container and configured to generate a plasma of the processing gas supplied into the processing container
Data Source
AI summary
The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.