Off-axis Lift-and-Rotation Unit for Deposition Film Uniformity
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Solution Overview
Problem
Non-uniformity in the thickness of deposited films in semiconductor manufacturing can lead to variations in device parameters and interconnect structures, affecting subsequent processing steps like lithographic patterning and etching.
Innovation Solution
A deposition chamber equipped with an off-axis lift-and-rotation unit, featuring an electrostatic chuck with arc-shaped holes and lift pins that protrude and retract, allowing for substrate lifting and rotation during film deposition, which helps in achieving uniform film thickness by averaging out plasma, gas flow, and temperature distribution asymmetries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional deposition chamber without substrate rotation is used, then the deposition process is simple and fast, but the film thickness uniformity across the substrate deteriorates
Solution Approach 1:
The patent introduces a lift-and-rotation unit that enables dynamic substrate rotation during deposition. The substrate is lifted from the electrostatic chuck and rotated to a new angular position before being placed back, creating dynamic movement that averages out plasma, gas flow, and temperature distribution asymmetries to achieve uniform film thickness
Solution Approach 2:
The deposition process is segmented into multiple steps: initial deposition, substrate lifting, rotation, repositioning, and continued deposition. This segmentation allows the substrate to be repositioned at different angular orientations, ensuring that each region of the substrate receives equivalent cumulative exposure to the deposition flux from different angles
2Manufacturing precision
If the substrate is rotated during deposition, then film thickness uniformity is improved, but the deposition time increases
Solution Approach 1:
The substrate is rotated by a specific angle (e.g., 180 degrees) rather than completing a full 360-degree rotation. This partial rotation is sufficient to reposition regions of the substrate that were in high-flux areas to low-flux areas and vice versa, achieving thickness uniformity without the time penalty of a complete rotation
Solution Approach 2:
The deposition process employs periodic substrate repositioning at intermediate stages rather than continuous rotation. The substrate is lifted, rotated to a new angular position, and placed back repeatedly throughout the deposition sequence, creating periodic action that maintains uniformity while minimizing interruption to the overall deposition timeline
3Measurement precision
If lift pins with arc-shaped holes are used for substrate handling, then substrate rotation precision is improved, but the electrostatic chuck structure becomes more complex
Solution Approach 1:
The patent employs arc-shaped holes in the electrostatic chuck and corresponds them with lift pins that have complementary curved surfaces. This curved geometry enables precise rotational positioning of the substrate by guiding it along a defined arc path, ensuring accurate angular placement while the chuck itself remains structurally simple
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces thickness variations across the substrate, enhancing film uniformity and improving the consistency of semiconductor device parameters by rotating the substrate between deposition steps.
Implementation Method 1
an electrostatic chuck having a flat top surface and located within a vacuum enclosure
Implementation Method 2
depositing a first film portion on the substrate... depositing a second film portion on the substrate
Implementation Method 3
A method of depositing a film in a deposition chamber
Data Source
AI summary
A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.


