Plasma System Liner Preventing RF Arcing
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Solution Overview
Problem
High radio frequency power induces arcing in HDP-CVD systems, causing damage and contamination that leads to substrate defects, as conductive particles form on chamber walls and can discharge onto substrates.
Innovation Solution
A liner is installed in the plasma system to separate the chamber wall from the plasma processing area, featuring a non-conductive surface with an insulating protective layer to prevent arcing, which is formed using micro arc plasma oxidation techniques, providing high voltage breakdown resistance and anti-abrasion properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high radio frequency power is applied to create dense plasma for HDP-CVD, then plasma reactivity and deposition efficiency are improved, but arcing occurs causing chamber wall damage and substrate contamination
Solution Approach 1:
A liner is introduced as an intermediary component between the chamber wall and the plasma processing area. The liner acts as a protective barrier that prevents direct interaction between the high-power plasma and the chamber wall, thereby eliminating arcing damage while preserving the benefits of high-power plasma processing.
Solution Approach 2:
The liner is designed as a sacrificial, replaceable component that protects the expensive chamber wall. Instead of damaging the chamber wall directly, the liner absorbs the arcing damage and can be replaced when worn, providing a cost-effective solution to the arcing problem.
2Device complexity
If chamber wall is directly exposed to plasma processing area, then system structure is simple, but conductive particles form on chamber wall leading to substrate defects
Solution Approach 1:
The liner serves as a mediator that physically separates the chamber wall from the plasma processing environment. This prevents the formation of conductive particles on the chamber wall that would otherwise contaminate substrates, while the liner itself can be designed to minimize interference with the plasma process.
3Reliability
If chamber wall is separated from plasma processing area using liner, then arcing and contamination are prevented, but device complexity increases
Solution Approach 1:
The liner can be implemented as a thin-walled structure that provides effective separation between the chamber wall and plasma area without significantly increasing device complexity. The thin-film approach maintains plasma access while providing sufficient protection against arcing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The liner effectively prevents arcing and contamination, reducing substrate defects by isolating the chamber wall from the plasma processing area and ensuring a clean environment for semiconductor fabrication.
Implementation Method 1
an insulating protective layer covering the liner body for separating the chamber wall from the plasma processing area
Implementation Method 2
which is formed using micro arc plasma oxidation techniques
Implementation Method 3
promote excitation and/or dissociation of the reactant gases by the application of radio frequency ('RF') energy to a reaction zone near the substrate surface, thereby creating plasma
Implementation Method 4
The liner is installed in the plasma system to separate the chamber wall from the plasma processing area
Data Source
AI summary
A chamber of a plasma system includes a chamber wall defining a plasma processing area, a substrate supporter configured to support a substrate in the plasma processing area, and a liner located in the plasma processing area and separating the chamber wall from the plasma processing area. A liner for a plasma system and a method for installing a liner to a plasma system are also provided.