Time-Modulation Plasma Mode for Substrate Processing
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Solution Overview
Problem
High-density plasma processing in semiconductor manufacturing causes plasma-induced damage (PID) due to non-uniform deposition and photo-conduction effects, which degrade the quality of insulating films and gate oxide layers, especially in structures with large aspect ratios.
Innovation Solution
Implementing a time-modulation plasma mode by periodically turning on and off the plasma power and process gas supply in a high-density plasma chemical vapor deposition (HDP-CVD) apparatus to reduce plasma-induced damage, using both upper and lower RF power and high-speed gas puffing valves to control plasma conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-density plasma is used for processing, then gap-filling capacity is improved, but plasma-induced damage occurs to the substrate
Solution Approach 1:
The patent applies periodic action by implementing time-modulation plasma mode where plasma is periodically turned on and off during processing. This periodic operation allows the substrate to recover between plasma exposure cycles, reducing cumulative plasma-induced damage while maintaining effective gap-filling capability through repeated deposition cycles.
Solution Approach 2:
The patent implements dynamics by making plasma power and gas flow dynamic rather than static. The RF power to plasma-generating electrodes is modulated in time, and gas flow rates are dynamically adjusted during processing. This dynamic control enables optimization of both gap-filling performance and reduction of plasma damage by adapting conditions throughout the processing cycle.
2Productivity
If plasma is continuously applied to deposit material layer, then deposition efficiency is improved, but plasma-induced damage accumulates in the substrate
Solution Approach 1:
The patent applies periodic action by implementing time-modulation plasma mode where plasma is periodically turned on and off during processing. This periodic operation allows the substrate to recover between plasma exposure cycles, reducing cumulative plasma-induced damage while maintaining effective gap-filling capability through repeated deposition cycles.
Solution Approach 2:
The patent maintains continuity of useful action by ensuring that material deposition continues effectively through repeated plasma cycles. The periodic plasma application is structured so that deposition occurs during plasma-on periods while recovery occurs during plasma-off periods, maintaining overall productive progress without continuous harmful exposure.
3Quantity of substance
If high RF power is supplied to induce plasma, then plasma density is improved for better deposition, but substrate damage increases
Solution Approach 1:
The patent applies periodic action by implementing time-modulation plasma mode where plasma is periodically turned on and off during processing. This periodic operation allows the substrate to recover between plasma exposure cycles, reducing cumulative plasma-induced damage while maintaining effective gap-filling capability through repeated deposition cycles.
Solution Approach 2:
The patent implements dynamics by making plasma power and gas flow dynamic rather than static. The RF power to plasma-generating electrodes is modulated in time, and gas flow rates are dynamically adjusted during processing. This dynamic control enables optimization of both gap-filling performance and reduction of plasma damage by adapting conditions throughout the processing cycle.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The time-modulation plasma mode effectively reduces plasma-induced damage by controlling plasma application and pressure, improving the uniformity and quality of deposited material layers and preventing degradation of insulating films and gate oxide layers.
Implementation Method 1
processing the substrate with a first plasma mode and then with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off
Implementation Method 2
The power supply for inducing the plasma can be an upper radio-frequency (RF) power supplied to upper electrodes disposed on the substrate
Implementation Method 3
Introduction of the at least one process gas can be controlled by periodically turning on and off at least one high-speed gas puffing valve attached to the chamber
Implementation Method 4
The chamber can occupy at least a portion of a high-density plasma chemical vapor deposition (HDP-CVD) apparatus. The first processing of the substrate (with the first plasma mode) and/or the second processing of the substrate (with the second plasma mode) can include depositing a material layer on the substrate
Data Source
AI summary
A method of processing a substrate using plasma includes loading a substrate into a chamber, processing the substrate with a first plasma mode and then processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.