Diffusion Break Structure for Isolated Active Regions With Preserved Stress

Solution Overview

Problem

The formation of diffusion break structures in semiconductor devices can alter stress distribution in active regions, leading to performance deterioration and complicate the fabrication process, especially when electrical isolation is required.

Innovation Solution

A semiconductor device incorporating a single or double diffusion break structure, featuring insulating patterns and openings over an insulating layer, which provides electrical isolation between active regions without the need for additional wiring, thereby maintaining stress and improving transistor mobility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If diffusion break structures are formed to provide electrical isolation, then electrical isolation between transistor devices is improved, but stress distribution in active regions deteriorates and fabrication process complexity increases

Engineering Contradiction:

Improveelectrical isolationVSAvoidfabrication process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the diffusion break structure formation with the existing gate electrode formation process. The gate electrode is formed to extend over the diffusion break region, combining two separate functions (electrical isolation and gate formation) into a single integrated structure, thereby eliminating the need for separate wiring to the diffusion break structures

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The gate electrode is designed to serve multiple functions: it provides the gate function for the transistor device and simultaneously extends over the diffusion break structure to provide electrical isolation. This multi-functional design eliminates the need for additional wiring structures

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If diffusion break structures are formed with wiring for electrical isolation, then electrical isolation is improved, but fabrication process complexity increases

Engineering Contradiction:

Improveelectrical isolationVSAvoidfabrication process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the diffusion break structure formation with the existing gate electrode formation process. The gate electrode is formed to extend over the diffusion break region, combining two separate functions (electrical isolation and gate formation) into a single integrated structure, thereby eliminating the need for separate wiring to the diffusion break structures

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts the wiring function from the diffusion break structure design. Instead of adding separate wiring structures to the diffusion break regions, the electrical isolation function is achieved through the gate electrode extension itself, removing the need for additional wiring steps

Inventive Principle:

Principle #2Taking out (Extraction)

Data Source

PatentEP4481802A1Semiconductor device inlcuding diffusion break structure and method of forming semiconductor device

Publication Date: 2024.12.25 GLOBALFOUNDRIES US INC

Figure 1A~1B
Figure 1C~1D
Figure 2A~2B

AI summary

A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.