Diffusion Contact Cross-Coupling for Standard Cell Area Reduction
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Solution Overview
Problem
Traditional cross-coupling-based designs for standard cells face challenges such as large cell size, high costs, complexity, and susceptibility to leakage and damage, particularly in 20 nanometer technology nodes and beyond, due to lithographic limitations.
Innovation Solution
Implementing a cross-coupling-based design using diffusion contact structures between gate cut regions and gate contacts, which allows for coupling within a two-gate pitch region, reducing the area required for standard cells and eliminating complex process burdens.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional metal layer structures are used for cross-coupling, then the design can be implemented, but the cell size increases and requires more gate grids
Solution Approach 1:
The patent transitions from using metal layer structures (planar routing) to using diffusion contact structures (vertical/substrate-level routing) for cross-coupling. This dimensional change allows connections to be made within the same gate pitch region rather than requiring additional gate grids, thereby reducing cell size while maintaining cross-coupling functionality.
Solution Approach 2:
The diffusion contact structure serves multiple functions: it provides electrical connection for cross-coupling, acts as a contact to the diffusion region, and enables compact routing within the gate pitch region. This multi-functionality eliminates the need for separate routing structures, reducing overall cell area.
2Area of stationary object
If 2-CPP cross-coupling-based design is implemented to reduce cell size, then area is reduced, but cost and complexity increase and susceptibility to leakage and damage increases
Solution Approach 1:
The patent merges the cross-coupling connection function with the existing diffusion contact structure. Instead of adding separate routing structures (which would increase complexity), the design utilizes the diffusion contact to serve both as a contact to the diffusion region and as the cross-coupling connection point, thereby reducing process complexity while maintaining compact cell size.
Solution Approach 2:
The diffusion contact structure inherently provides the cross-coupling connection capability without requiring additional processing steps or structures. The existing diffusion region and contact serve the dual purpose of device operation and cross-coupling, eliminating the need for complex additional manufacturing processes.
3Area of stationary object
If 2-CPP cross-coupling-based design is implemented to reduce cell size, then area is reduced, but susceptibility to leakage and damage to dielectric increases
Solution Approach 1:
The design uses standard, well-characterized diffusion contact structures that are part of the conventional CMOS process stack. These structures have proven reliability and are optimized for the specific technology node, avoiding the use of experimental or non-standard structures that would be more susceptible to leakage and damage.
Solution Approach 2:
The patent optimizes the diffusion contact structure parameters (such as contact area, depth, and doping concentration) specifically for the 2-CPP implementation to ensure adequate electrical performance while maintaining robustness against leakage and dielectric damage. The structure is tailored to the specific technology node requirements.
Data Source
AI summary
An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure; providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and providing a diffusion contact structure between the first and second gate cut regions to couple the first gate contact to the second gate contact.