Semiconductor/Solid-State Device Details TRIZ Cases

A power electronics module uses a conductor plate to create a coaxial gate-emitter circuit arrangement.

A semiconductor device uses a low elastic modulus bonding portion between stacked chips to absorb thermal stress and maintain stable electrical connections.

Vertical stacking of aligned conductive layers with selective vias reduces fabrication cost and area for multiple layer metal-insulator-metal capacitors.

A stabilizing unit maintains a pool boiling cooling device in a fixed functional orientation.

Bent auxiliary conductive wirings redistribute stress at circuit board corners to prevent outermost wiring breaks during semiconductor chip bonding.

Segmented semiconductor dies with composite encapsulation reduce warpage while maintaining high integration density in advanced packaging.

Reticle test patterns with diverse structures detect process weaknesses to improve pattern fidelity and control during lithography.

Cross-connected through-silicon vias route electrostatic discharge currents bidirectionally, preventing catastrophic reverse voltage stress on photodiodes.

An IGBT module uses embedded ceramic elements and a heat conductive metal plate to improve thermal management.

A three-dimensional die-stacking package structure uses a polymer insulating layer to align stacked dice and form through holes for conductive contacts.

Segmented filler dispersion prevents aggregation and heat resistance loss caused by excessive surface treatment agents in integral blend methods.

An optocoupler integrates transmitter and receiver dies on a shared conductive pad using insulating layers for signal transfer.

A segmented nickel layer structure with phosphorus content reduces total plating thickness while maintaining solder wettability.

A scribe lane groove with a shallower first depth and a deeper through hole guides sawing stress to separate semiconductor chips.

Segmented base plate with spaced pins reduces coolant flow resistance and processing complexity while improving heat dissipation efficiency.

A stiffener cutout exposes a perimeter identification code on an integrated circuit substrate, resolving traceability conflicts with structural warpage control.

Redistribution layer extends through substrate openings to connect conducting pads, eliminating bulky lead frames and reducing chip package size.

Air gaps and barrier penetration reduce capacitive coupling between interconnections, improving signal transfer speed while maintaining mechanical strength.

Spiral cooling fins create a fluid flow path that transfers heat from semiconductor elements while minimizing pressure loss in the cooling circuit.

Stacked semiconductor chips separated by an insulating sheet increase creeping distance and withstand voltage without extending the vertical signal path length.

Wider contact plugs spanning isolation regions reduce high contact resistance caused by insufficient substrate area.

A lead-free solder composition uses copper, palladium, aluminum, and silicon to enhance wettability and mechanical strength.

A permeable membrane layer enables selective etchant diffusion to decompose sacrificial material and form air cavities in interconnect structures.

Segmented base seats enable the pump and reservoir to bend from horizontal to overlapping positions, resolving rigid space constraints in electronic devices.

Offsetting inner and outer contacts in a zigzag pattern resolves uneven current distribution caused by fixed contact holes.

Sloped sidewalls on semiconductor dies accept direct conductor deposition to form integrated electromagnetic shielding layers.

Direct-write ablation patterns permanent dielectric and conductive layers, eliminating photolithography complexity and reducing material waste.

Diffusion contact structures couple gate contacts within a two-gate pitch region, reducing standard cell area while eliminating complex metal routing processes.

Segmented strip-shaped and comb-shaped conductive patterns lower equivalent series resistance and inductance while mitigating solder bridging defects.

A fuse sensing circuit determines the state of a fuse unit cell by comparing the discharge rates of two matched capacitors.

Oxidizing the barrier layer between trenches and vias reduces surface scatter effects, enabling lower resistivity noble metal interconnects at 5 nm nodes.

Segmented display electrodes use laser cuts to isolate foreign objects between stacked wiring layers.

Vertical conductors with non-stepped sidewalls in a single dielectric layer simplify manufacturing steps while reducing the overall package footprint.

A copper alloy base plate maintains flatness during brazing to resolve the trade-off between thermal conductivity and hardness.

A silicone rubber composition cures into a tack-free, adhesive material that eliminates dust deposition while maintaining high light transmittance.

A routing die bonds face-to-face with semiconductor dies to increase interconnect density within a single encapsulant layer.

Additive manufacturing deposits patterned stress directing structures within encapsulant material.

Segmenting bit lines over dummy blocks allows a power pad to create additional transfer paths, ensuring stable voltage supply to peripheral circuits.

Segmented die pad trenches with variable dimensions suppress peeling growth, preventing damage to die bonding material and improving heat sink performance.

Nitriding the barrier layer improves nucleation to eliminate voids in high aspect ratio through silicon vias, ensuring reliable 3D interconnections.

Insulated heat sink bonding and conductive pads enable resistance measurement to identify poor adhesion and prevent antenna effects.

A leadframe solder dam retains solder via surface tension around a semiconductor die.

A semiconductor device integrates embedded heat dissipation paths within its dielectric layer to circulate cooling fluids directly between interconnection structures.

Temperature-dependent viscosity allows easy application while preventing flow-out during operation, eliminating nozzle clogging and frame requirements.

Support pillars reinforce the stacked body to prevent distortion and collapse as memory cell density increases.

Vertical contact plugs stabilize source potential by forming shunt areas inside the memory cell array.

Simultaneous front and side encapsulation with uniform thickness mitigates wafer warpage, eliminating extensive post-processing steps.

Integrating semiconductor and blank substrates via thermosetting resin molding suppresses warp caused by high contraction stress.

A mold release film with specific thickness and modulus properties mediates pressure during transfer molding of semiconductor packages.

Structured carrier sidewalls with singulation traces and barrier grooves create mechanical anchoring for casting compounds, preventing chip displacement.

A phase change cooling system removes heat from dense electronics using vapor transport, minimizing energy consumption and footprint.

Patterned dielectric areas on a conductive layer enhance adhesion and reduce mechanical stress during GaN-to-CMOS integration.

Bent elongated leads connect vertically stacked planar leadframes into a 3D network, reducing parasitic resistances and conserving board space.

Galvanically grown metal layers form external contact pads on encapsulated semiconductor chips, reducing package pad size constraints and manufacturing costs.

Conductive pillars and redistribution layers create vertical interconnects, eliminating time-consuming through silicon vias to reduce manufacturing costs.

Extended intermetallic compound layer reinforces thin traces to prevent molding deformation and short circuits in compact semiconductor packages.

Through-substrate vias create a vertical ground path, eliminating surface pads to reduce chip size and bonding costs.

Segmented air channels disrupt standing waves while partial fluid circulation minimizes pump failure risk, reducing airflow noise.

A semiconductor device arranges gate electrodes and interconnection lines at distinct pitches to optimize layout design.

A shunt protection circuit uses back-to-back diodes and an MOS gated SCR to provide an alternate current path when LEDs fail.

Backside copper pillars and redistribution lines reduce interconnection complexity by enabling flexible via placement.

A heat dissipation structure between the die and inductor facilitates thermal conduction to outer pins, reducing hot spots on the inductor.

A semiconductor device uses a heat conductive sheet passing through an opening hole in a shield can to connect the element and cooling member.

Vertical pillars confine phase change material to reduce reset current, resolving the trade-off between cell density and manufacturing precision.

Inverting the cell-over-peri sequence to protect contact plugs from metal contamination and thermal deterioration.

A semiconductor fuse wiring uses a pollution-control layer and via hole wirings to prevent material dispersion during cutting.

Parallel conductive fins with insulator breakdown enable low voltage programming in compact integrated circuits.

Plasma or ion doping treatments modify dielectric layer sidewalls to enhance adhesion with filled metal layers, preventing stripping during planarization.

A substrate design uses equal area conductive elements to ensure uniform solder height and maintain die parallelism.

Embedded insulator with specific softening and elastic properties secures electrical connections under thermal stress.

Sidewall conductors replace BGAs and through-package vias to reduce vertical profile while maintaining reliable layer-to-layer interconnectivity.

A MEMS variable capacitor uses segmented driving and signal electrodes to widen spacing distance via electrostatic force.

Mounting passive components on a redistribution layer stack above the die shortens signal pathways, reducing electrical losses and noise.

A light-emitting unit connects organic elements in series using a separation layer with overlapping electrodes.

TLP bonding joins high melting temperature particles to reduce fabrication complexity while maintaining heat transfer efficiency.

Introducing a heatspreader layer with thermally conductive through vias reduces thermal stress and warpage caused by expansion mismatch.

Optimized plasma parameters limit nitrogen penetration into the titanium layer, preventing conversion to nitride and ensuring effective silicide formation.

Spacer and noise prevention film block microcomputer noise propagation to dynamic RAM, preserving high-speed wiring while stabilizing operational margins.

A high-k spacer layer replaces low-k isolation in FinFETs to form a robust barrier between gate and source/drain contacts.

Vertical I/O terminals on built-up QFN lead frames enable side-view inspection of solder joints, resolving cold joint risks in leadless packages.

A selective intermediate film prevents undesired etching of the interlayer insulating film, maintaining uniform resistance and withstand voltage.

Radial ray curable silicone rubber composition uses a photosensitive dye to enable visual curing detection while maintaining excellent anticorrosive properties.

Segmented heat shields with capacitive isolation reduce parasitic capacitance while limiting temperature rise and preventing electromigration failures.

Bonding a heat dissipation member to routing structure pads bypasses encapsulant layers, reducing the thermal path length.

Multi-plane deposition system uses angled masks to deposit conductive material on substrate sidewalls and surfaces.

Leveling conductors bridge non-coplanar package substrate pads to create a unified mounting surface, resolving thermal expansion mismatch issues.

Selective capping layers protect FinFET gate structures during etching to enable precise self-aligned source/drain contact plug formation.

Segmented resin case exposes terminals via openings to inspect soldering, while a stress absorption room accommodates sealing material expansion.

A segmented heat spreader extends through an interposer to conduct heat away from stacked dies, resolving low conductivity bottlenecks.

An injection hole in a thermal dissipation device channels molding compound vertically to prevent gold wire tilting and short circuits in BGA packages.

Electroplated metal forms a bridge structure over contact regions to enhance heat extraction from optoelectronic devices.

Leadless IC package uses standoff contacts and die attach pad to expose electrical connections below molding layer.

A semiconductor package uses dummy balls to reduce chip size while maintaining conventional PCB wiring pitch levels.

Embedded microjet arrays reduce thermal resistance by directing single-phase coolant directly onto the substrate, enabling higher power levels.

Metal-filled through vias in a substrate enable compact component placement while maintaining structural integrity.

A back gate draw-out region extends deeper than the source to minimize contact resistance in semiconductor devices.

A convex metal plug contact bottom surface increases the interface area to lower electrical resistance in semiconductor devices.

Embedding gate interconnects inside the trench structure eliminates surface metal routing, resolving insulation reliability issues under high temperature.