Semiconductor Through Hole Metal Adhesion via Surface Treatment
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the poor adhesion between the metal layer and the dielectric layer in through holes, leading to substandard device performance and yield due to the material property differences, which results in stripping issues during planarization.
Innovation Solution
A surface treatment process, such as plasma or ion doping, is applied to the dielectric layer sidewalls of the through holes to enhance adhesion, matching the material properties with the subsequently filled metal layer, thereby improving the bonding quality between the metal and dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal layer is filled in a through hole to realize connection, then electrical connection is achieved, but poor adhesion between metal layer and dielectric layer causes forming quality degradation
Solution Approach 1:
A surface treatment process is performed on the dielectric layer sidewalls before filling the metal layer to create a treatment layer. This preliminary action modifies the surface properties of the dielectric layer to enhance adhesion between the dielectric layer and the subsequently filled metal layer, preventing forming quality degradation.
Solution Approach 2:
A treatment layer is introduced as an intermediary between the dielectric layer and the metal layer. This treatment layer, formed through surface treatment processes such as plasma treatment, ion doping, or chemical vapor deposition, acts as a mediator that improves the adhesion interface between materials with poor natural bonding compatibility.
2Productivity
If channel length is reduced to increase integration density, then component density improves, but gate control capability deteriorates leading to higher subthreshold leakage
Solution Approach 1:
The patent applies surface treatment processes (plasma treatment, ion doping, CVD) to modify the physical and chemical parameters of the dielectric layer sidewalls. These parameter changes create a treatment layer with enhanced surface energy and improved wettability, which improves adhesion without altering the channel dimensions or integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures better forming quality and increased yield of semiconductor devices by enhancing the adhesion force between the metal and dielectric layers, preventing stripping during planarization and improving overall device performance.
Implementation Method 1
The surface treatment process includes a plasma surface treatment process
Implementation Method 2
The surface treatment process includes an ion doping process
Data Source
AI summary
Semiconductor device and fabrication method are provided. The method for forming the semiconductor device includes providing a substrate; forming a dielectric layer on the substrate; forming a through hole in the dielectric layer, the through hole exposing a portion of a top surface of the substrate; performing a surface treatment process on the dielectric layer of sidewalls of the through hole; and filling a metal layer in the through hole.