Thermal Dissipation Device Vertical Injection Hole for BGA Wire Protection
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Solution Overview
Problem
The manufacturing of ball grid array (BGA) semiconductor package devices faces issues with molding compound flow causing gold wires to tilt or disengage, leading to short circuits and open circuits, especially in stacked chip packages due to lateral flow of the compound.
Innovation Solution
A thermal dissipation device with a main body and support member, featuring an injection hole and inner and outer rings that protrude from the upper surface, prevents sealant flow onto the second upper surface, increasing contact area with the mold and reducing delamination risks, while maintaining a design that allows proper mounting of additional thermal dissipation elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If molding compound flows laterally into the cavity through a lateral runner and mold gate, then the semiconductor package device can be manufactured, but the gold wires may tilt and contact neighboring gold wires to form short circuits or disengage to form open circuits
Solution Approach 1:
The patent inverts the conventional lateral flow direction by implementing a vertical injection hole structure. The molding compound is injected vertically through the thermal dissipation device from top to bottom, reversing the traditional lateral injection approach. This inversion eliminates the lateral flow path that causes wire damage while maintaining effective mold filling.
Solution Approach 2:
The thermal dissipation device serves as an intermediary component with an integrated injection hole. This mediator structure allows the molding compound to flow vertically through it, protecting the gold wires from direct lateral flow impact while still enabling the molding process to proceed effectively.
2Adaptability or versatility
If the package device includes a plurality of semiconductor chips stacked together, then the functionality and integration are improved, but short circuits and open circuits occur even more easily due to lengthened wires
Solution Approach 1:
For stacked chip packages, the vertical injection approach through the thermal dissipation device further benefits the structure. The vertical flow path accommodates the stacked configuration better than lateral flow, as it directs the molding compound downward through the injection hole, away from the extended wire paths between stacked chips, thereby reducing the risk of wire damage and connection failures.
3Reliability
If the thermal dissipation device defines an injection hole and rings structure, then delamination is reduced and contact area with mold is increased, but the device complexity increases
Solution Approach 1:
The thermal dissipation device integrates multiple functions: it serves as both the thermal management component and the injection mold interface structure. The rings and injection hole are incorporated into the thermal dissipation device itself, allowing it to function as both a thermal conductor and a molding structure, thereby reducing overall device complexity despite the added features.
Solution Approach 2:
The patent merges the thermal dissipation device with the injection mold interface components (rings and injection hole). Instead of adding separate components for molding, these features are integrated directly into the thermal dissipation device, combining thermal management and molding functions into a single unified structure.
Data Source
AI summary
A thermal dissipation device includes a main body and a support member. The main body has an upper surface, a lower surface opposite to the upper surface, and a lateral surface. The main body defines an injection hole extending through the main body, and includes an inner ring protruding from the upper surface and adjacent to the injection hole and an outer ring protruding from the upper surface and adjacent to the lateral surface. The support member connects to the lateral surface of the main body. An upper surface of the inner ring is higher than an upper surface of the outer ring. A first intersection point between the inner ring and the upper surface of the main body is higher than a second intersection point between the outer ring and the upper surface of the main body.


