Embedded Heat Dissipation Paths in Semiconductor Dielectric Layers
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Solution Overview
Problem
Highly integrated semiconductor chips face challenges in heat dissipation due to low thermal conductivity of low-K dielectrics, leading to performance issues as existing heat dissipation methods, such as adding heat sinks or fans, are inefficient in addressing internal chip heat.
Innovation Solution
A semiconductor device with a heat dissipation path embedded in the dielectric layer between interconnection structures, allowing liquid or gas to circulate, and a micro heat dissipation pipe made of high polymer, insulating material, or metal nanotube, is integrated, along with a package structure that includes a circulation pump to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If low-K dielectric materials are used for interconnection structures, then signal transmission performance is improved, but thermal conductivity deteriorates
Solution Approach 1:
The dielectric layer is segmented to create heat dissipation paths (trenches) that divide the low-K dielectric material into regions separated by high thermal conductivity pathways, allowing simultaneous signal transmission through low-K regions and heat dissipation through dedicated channels
Solution Approach 2:
Different regions of the dielectric layer are assigned different functions: areas with interconnection structures maintain low-K properties for signal transmission, while heat dissipation paths are created with high thermal conductivity materials or structures to address thermal management locally
2Temperature
If heat sinks or fans are added to the package, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The heat dissipation function is merged with the existing dielectric layer structure by integrating heat dissipation paths directly into the interconnection layer, eliminating the need for separate heat sinks or fans in the package
Solution Approach 2:
The semiconductor device structure itself provides heat dissipation functionality through the integrated heat dissipation paths in the dielectric layer, making the device self-cooling without requiring external active cooling components
3Temperature
If liquid or gas cooling is implemented, then heat dissipation efficiency is improved, but risk of direct contact with dielectric layer increases
Solution Approach 1:
A physical barrier or intermediary structure is introduced between the circulating liquid/gas and the dielectric layer to prevent direct contact, while still allowing efficient thermal energy transfer from the interconnection structures to the cooling fluid
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively absorbs heat generated within the chip, improving heat dissipation efficiency and preventing direct contact between the liquid or gas and the dielectric layer, thus maintaining device performance.
Implementation Method 1
The circulating liquid or gas can absorb heat generated within the semiconductor device in its operation
Implementation Method 2
a heat dissipation path, embedded in the dielectric layer between the interconnection structures, for liquid or gas to circulate in the heat dissipation path
Implementation Method 3
a circulation pump provided outside the package, wherein the package comprises a first opening and a second opening which are in connection with the heat dissipation path, and the circulation pump drives liquid or gas to circulate through the first opening, the heat dissipation path and the second opening
Data Source
AI summary
A semiconductor device, a formation method thereof, and a package structure are provided. The semiconductor device comprises: a semiconductor substrate in which a metal-oxide-semiconductor field-effect transistor (MOSFET) is formed; a dielectric layer, provided on the semiconductor substrate and covering the MOSFET, wherein a plurality of interconnection structures are formed in the dielectric layer; and at least one heat dissipation path, embedded in the dielectric layer between the interconnection structures, for liquid or gas to circulate in the heat dissipation path, wherein openings of the heat dissipation path are exposed on the surface of the dielectric layer. The present invention can improve heat dissipation efficiency, and prevent chips from overheating.