IGBT Module With Embedded Ceramic Heat Dissipation

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Solution Overview

Problem

Existing IGBT modules face limitations in heat dissipation and current-carrying capability due to poor electrical conductivity of metal wires and inadequate heat dissipation performance, which restricts their application in high-current electronic devices.

Innovation Solution

The IGBT module design incorporates a heat dissipation base plate with embedded ceramic elements, a heat conductive metal plate, and multiple wiring layers, where the IGBT chip is mounted on the wiring layer and the heat conductive metal plate, with an organic insulating medium filling the gaps, allowing direct connection of pins without metal wires and enhanced heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If metal wires with small cross-sectional diameter are used to connect the collector terminal to the circuit board, then the device complexity is reduced, but the electrical conductivity and current-carrying capability deteriorate

Engineering Contradiction:

Improveconnection structureVSAvoidcurrent-carrying capability

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The patent transitions from one-dimensional wire connections to a multi-dimensional copper foil structure that integrates multiple functions (electrical connection, heat dissipation, mechanical support) across different layers and planes of the circuit board, thereby achieving high current-carrying capability without increasing structural complexity

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The copper foil structure serves multiple functions simultaneously: it provides electrical connection for high current, acts as a heat dissipation pathway, and offers mechanical support for mounting the IGBT chip, eliminating the need for separate metal wires and heat sinks

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Device complexity

If the IGBT chip is directly mounted onto the ceramic sheet for insulation, then the device complexity is reduced, but the heat dissipation performance deteriorates

Engineering Contradiction:

Improvemounting structureVSAvoidheat dissipation performance

Core Design Contradiction:

Device complexityVSTemperature

Solution Approach 1:

The patent employs a composite structure combining ceramic sheet (for insulation), copper foil (for heat conduction), and organic insulating medium (for thermal management), where each material contributes its superior properties to achieve overall excellent heat dissipation performance while maintaining structural simplicity

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The copper foil acts as an intermediary between the IGBT chip and the ceramic sheet, providing a high-conductivity thermal pathway that bridges the gap between the heat-generating component and the insulating substrate, thereby resolving the conflict between electrical insulation and thermal management

Inventive Principle:

Principle #24Intermediary (Mediator)

3Power

If the IGBT chip carries higher current to meet electronic apparatus requirements, then the power capability is improved, but the heat generation increases

Engineering Contradiction:

Improvecurrent-carrying capabilityVSAvoidheat generation

Core Design Contradiction:

PowerVSLoss of energy

Solution Approach 1:

The patent converts the harmful effect of heat generation into a beneficial feature by designing the copper foil structure and organic insulating medium to actively dissipate the heat, transforming the waste energy into a controlled thermal management system that enables higher current operation

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design significantly improves the current-carrying capability and heat dissipation performance, enabling the IGBT module to withstand higher voltages and currents, specifically up to 40 kV, while simplifying the manufacturing process and reducing costs.

Implementation Method 1

an organic insulating medium is filled between the first heat dissipation plate and the heat dissipation base plate, and the organic insulating medium is also filled between the first heat dissipation plate and the second heat dissipation plate

Methodology Applied

Scientific EffectInsulation: Thermal Insulation

Implementation Method 2

a second side of the IGBT chip is provided with a heat conductive metal plate

Methodology Applied

Scientific EffectHeat conduction: Conduction (thermal)

Implementation Method 3

a first ceramic heat dissipation element is embedded in the heat dissipation base plate

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11107744B2Insulated gate bipolar transistor module and manufacturing method thereof

Publication Date: 2021.08.31 AQUATIC ENTERPRISES PTY LTD

AI summary

An IGBT module includes a heat dissipation base plate. A first ceramic heat dissipation element is embedded in the heat dissipation base plate. A first wiring layer is provided on the surface of the heat dissipation base plate. The first side of an IGBT chip is mounted onto the first wiring layer. The second side of the IGBT chip is provided with a heat conductive metal plate. A first heat dissipation plate having a first through hole is provided on a side of the first wiring layer. The IGBT chip and the heat conductive metal plate are located in the first through hole. A second wiring layer is provided on a side of the first heat dissipation plate away from the IGBT chip. The second wiring layer is provided on a side of the heat conductive metal plate.