Diode-Integrated Memory Cell Structure for Leakage Control
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Solution Overview
Problem
Cross-point memory cells experience significant current leakage, leading to data retrieval errors, necessitating the use of diodes or select devices for current control in memory arrays.
Innovation Solution
The development of memory structures comprising a memory cell with programmable multivalent metal oxide between electrodes, coupled with a diode configuration that includes a first diode electrode directly over one electrode and a second diode electrode laterally outward, along with an intermediate diode region, to enhance current control and reduce leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If cross-point memory cells are used to store data, then memory storage capability is improved, but current leakage increases leading to data retrieval errors
Solution Approach 1:
A diode structure is introduced as an intermediary component between the memory cell and the read/write circuitry. The diode acts as a selective conductor that allows current to flow in only one direction, thereby preventing leakage current from affecting adjacent memory cells during data retrieval operations, thus improving data accuracy without compromising storage capability
2Reliability
If diodes are added to control current through memory cells, then current leakage is reduced, but device complexity increases
Solution Approach 1:
The diode structure is merged with the memory cell architecture by forming the diode electrodes and regions directly over and around the memory cell electrodes. This integration approach combines the memory storage function and the current selection function into a unified structure, reducing the need for separate components and minimizing overall device complexity while maintaining reliable current control
Data Source
AI summary
Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.