Semiconductor/Solid-State Device Details TRIZ Cases

An embedded component package structure places a die inside a substrate to shrink size and improve heat dissipation without increasing manufacturing complexity.

A semiconductor chip metal electrode uses dual-metal regions to form an oxide layer for strong adhesion.

A semiconductor device uses a two-step insulating layer structure to form external connection terminals.

Built-in measuring devices track bonding wire deformation to calibrate ultrasonic vibration and bond force, eliminating external equipment setup time.

A shielding electrode electrically connected to a comb pixel electrode suppresses tip discharge in array substrates.

A semiconductor material support serves as both substrate and cooling element for electronic power modules.

A rigid carrier bonded to the front surface supports ultra-thin wafers, while a backside support layer melts for separation to prevent cracking.

Cavity substrates enable vertical stacking of integrated circuits within a shared footprint, resolving connectivity and structural integrity trade-offs.

Segmented interconnects use corrosion-resistant metals outside the seal ring to prevent copper oxidation while maintaining high electrical conductivity.

A piezoelectric air pump generates airflow through ultrasonic vibration to cool electronic components without mechanical fans.

Laser marking trenches on bare silicon wafer backside before metal deposition prevents micro-chipping during dicing and preserves electrical performance.

Embedded bridge die creates direct vertical power pathways through the substrate bulk, reducing ohmic and dynamic drops compared to circuitous surface routing.

Doped mask layers adjust sidewall angles to improve trench filling and reduce void formation in high aspect ratio gaps.

Low temperature aluminum oxide deposition prevents copper oxidation while enabling solder wetting.

Back-end-of-line programmable resistive elements trim integrated circuit parameters, eliminating large polysilicon resistors and separate non-volatile storage.

Dummy structures planarize deposition surfaces to prevent CMP dishing, reducing metal residue accumulation and leakage current in HKMG CMOS technology.

Silicided gate electrodes paired with a planarizing interlayer insulating layer reduce interconnect resistance variations caused by etching selectivity issues.

A multi-strike process breaks oxide layers on copper bumps to expose un-oxidized surfaces for direct bonding with aluminum pads.

A bypass network coupled in parallel with a blocking capacitor shunts low frequency signals away from the high Q RF path.

A liquid cooling apparatus integrates high emissivity heat dissipating members on system boards to enhance thermal radiation and cooling performance.

A semiconductor substrate uses front-side blind recesses filled with doped polysilicon to create through-wafer electrical connections.

Redundant electrical connectors bridge stacked semiconductor dies to enhance thermal conduction, preventing solder bond failures that cause open circuits.

An elevation-adaptive electrical connection links adjacent semiconductor dies using three-dimensionally formed interconnection plates.

Die attach pads at different elevations increase effective separation distance without altering package footprint.

Simultaneous formation of zero layer and active area alignment marks resolves the trade-off between fabrication simplicity and high precision at the die level.

A photosensitive resin composition uses a biphenyl polyimide precursor to reduce cured film warping.

Vertical stacking via hybrid bonding improves integration density while maintaining compact package size through nested structures.

Conductive through-polymer vias integrate high-density capacitors within semiconductor packages, reducing thermal expansion mismatches and parasitic effects.

Integrating a lateral diode structure with a multivalent metal oxide memory cell reduces leakage current and improves data retrieval accuracy.

A segmented terminal with a cylindrical leading end confines solder to form a reliable fillet on the circuit board.

An integrated circuit package uses a lid structure to define an air cavity, protecting the sensor without chemical protectants.

A ferroelectric random access memory cell structure integrates the upper intermetal dielectric with an etch stop layer to simplify fabrication.

Silicone gel potting material with conductivity-imparting agent reduces leakage current and prevents substrate cracking in power semiconductor modules.

Segmenting lead frame wettability controls solder flow during pressing, preventing voids and overflow while enhancing heat dissipation.

A segmented alignment mark uses opaque and transparent regions to create gray scale contrast for accurate position detection.

A primary solder ball reflows to coat the under bump metallurgy side wall, forming a protective antioxidant layer.

Varying solder resist opening areas distribute thermal stress and prevent cracks at joints.

Laminated heat sink plates with lattice Cu-Mo alloys match alumina expansion, preventing delamination in high-output GaN devices.

Leadframes with curvilinear slots enable singulation using standard saw blades.

A semiconductor module uses vertically stacked dies with separated peripheral pads to reduce substrate area.

Segmented spacer patterning controls line widths and prevents overheating in sub-38nm semiconductor interconnects.

A prefabricated substrate uses a thick first conductor layer to absorb heat from mounted components.

Sealing resin insulating section maintains uniform thickness to prevent filler clogging in narrow gaps during compression molding.

Reflowed conductive bumps protrude above the molded structure to increase stacking yields and reduce footprint area without contamination.

A movable baffle system adapts to component presence on printed circuit boards to direct airflow effectively.

This assembly integrates LED chip transfer and phosphor film formation into one step, eliminating separate manufacturing stages that increase cost and cycle time.

Overlapping signal and grounding vias shift transmission horizontally, reducing leakage loss while maintaining mechanical strength for 80 GHz signals.

A chip package uses a laser stop layer to guide ablation for precise via formation.

Isolated polymeric belts absorb thermal expansion mismatch stress around conductive bumps, preventing crack propagation and dielectric film delamination.

Protective films on insulating layer depressions force contaminants through a zigzag path, preventing luminance degradation without increasing device size.

A gallium nitride PN diode arrestor clamps voltage and shunts current to ground.

Isolation trench etching defines low resistance silicon pillars for simultaneous redistribution layer and through-silicon via fabrication, reducing die size.

Bent heat-absorption ends extend through base slots to bear on the bottom, eliminating indirect transfer paths and reducing thermal resistance.

A substrate with thermal vias lacking liner layers conducts heat through conductive material.

Partial overlap between stacked semiconductor dies reduces package width and thickness while lifting supporters maintain electrical connectivity.

Sacrificial materials protect trench interfaces during via etching, reducing chamfering and resistance variability in semiconductor devices.

An uneven pad upper surface with recessed and elevated portions increases friction and bonding strength against conductive connecting members.

A frame with a low-rigidity protrusion buffers thermal stress, reducing warpage and cracks caused by mismatched expansion coefficients.

A wide-gap semiconductor device uses a second electrode forming a Schottky junction to suppress discharge at the end part.

Vertical layer separation creates high contrast between light and dark regions, enabling precise photodetector alignment in chip-on-glass manufacturing.

A semiconductor wafer bonding alignment mark formed by a point array in the top cover layer facilitates device recognition.

Segmented fin pitches balance airflow efficiency with safety certification by restricting outlet gaps below 1 mm while maintaining inlet flow.

Multiple bond heads pick up and dip semiconductor components simultaneously, resolving sequential processing bottlenecks that limit device productivity.

A chip package integrates a spacer layer directly contacting the semiconductor device to form cavities without adhesive glue.

Cylindrical external terminal communication section perpendicular to the wiring pattern surface enables direct insertion of external terminals within the device projection area.

Organic buffer pads absorb internal stresses during thermal bonding of light emitting diode chips.

A packaging structure uses protruding resin portions to align metal terminals for direct bonding.

A non-silicone putty combines thermally conductive fillers with hollow polymeric particles in a polymer matrix.

Redistribution layers route I/O terminals outside the chip to resolve cracking and peeling caused by thermal stress.

Large grain metallic films protect electrode layers from ultrasonic stress, preventing gate threshold voltage deterioration during wire bonding.

A resistor marker layer guides a mask generating algorithm to adjust implant dosage for precise sheet resistance matching.

Alternating extended parts on a comb-like leadframe increase cross-sectional area to resolve voltage differences and improve current density uniformity.

Carrier substrate with patterned lens mounting surface attaches to imager devices, resolving assembly complexity while maintaining alignment precision.

Spaced metal sheets in a heat spreading plate thermally connect individual chips while gaps prevent cross-heating between adjacent components.

Vertical stacking of logic and memory dies reduces transmission loss while a heat sink manages thermal density in the compact footprint.

Segmenting the upper molding member with trenches mitigates warpage and protects connection members from thermal expansion-induced stress.

Groove structure in upper cover plate isolates sensing region from interfering light beams, preventing reflection that degrades imaging quality.

A semiconductor module integrates an insulating heat dissipation sheet directly beneath a die pad to manage thermal loads.

Backside electrical interconnects redirect chip contact pads through encapsulation material to substrate solder structures.

Insulating films with poorer solder wettability cover metal pillar side faces to prevent tombstone defects and electrical shorts during flip chip mounting.

Integrates passive devices within inorganic dielectric layers to eliminate organic materials that cause warpage and CTE mismatch.

Segmented trench structure adjusts polarization charge effects to maintain normally-off operation and high gate breakdown voltage.

Projections extending in the thickness direction increase cross-sectional height, preventing warping caused by heat contraction in thin substrates.

Redistribution layers and solder bumps connect stacked semiconductor dies, eliminating through-hole vias to reduce die area and signal propagation delay.

A thermal interface device couples high-power transistors to heat pipe sinks using high-conductivity materials.

Nanoparticle fillers bridge sub-100-micron gaps between large dies and layer structures, preventing mechanical stress damage during embedding.

A semiconductor module uses a screw passing through peripheral holes to fix the heat sink directly.

A semiconductor device with multi-directional interconnects in adjacent layers reduces local voltage drops and stabilizes operation.

Two-stage sawing with a beveled blade minimizes mechanical stress and chipping during integrated circuit singulation.

Segmented insulating rings shield semiconductor wafers from arc plasma using plastics and ceramics materials.

Deflectable silicon electrodes in a compliant monopolar transfer head compensate for height variations to ensure complete pick-up.

A re-timing circuit latches input signals using a second clock to generate replica clocks for precise signal transfer through stacked memory electrodes.

A semiconductor film uses distinct adhesive and expansion areas to ensure uniform device distribution during fabrication.

Vertical cantilevered fingers increase thermal dissipation surface area while maintaining minimal package footprint and simplifying testing procedures.

A semiconductor substrate integrates a high dielectric loss tangent layer between power and ground planes to suppress simultaneous switching noise.

Multi-blade assembly divides substrates while abrasive spacer surfaces grind chip outer contours.