Semiconductor/Solid-State Device Details TRIZ Cases

An embedded component package structure places a die inside a substrate to shrink size and improve heat dissipation without increasing manufacturing complexity.

A semiconductor chip metal electrode uses dual-metal regions to form an oxide layer for strong adhesion.

A semiconductor device uses a two-step insulating layer structure to form external connection terminals.

Built-in measuring devices track bonding wire deformation to calibrate ultrasonic vibration and bond force, eliminating external equipment setup time.

A shielding electrode electrically connected to a comb pixel electrode suppresses tip discharge in array substrates.

A semiconductor material support serves as both substrate and cooling element for electronic power modules.

A rigid carrier bonded to the front surface supports ultra-thin wafers, while a backside support layer melts for separation to prevent cracking.

Cavity substrates enable vertical stacking of integrated circuits within a shared footprint, resolving connectivity and structural integrity trade-offs.

Segmented interconnects use corrosion-resistant metals outside the seal ring to prevent copper oxidation while maintaining high electrical conductivity.

A piezoelectric air pump generates airflow through ultrasonic vibration to cool electronic components without mechanical fans.

Laser marking trenches on bare silicon wafer backside before metal deposition prevents micro-chipping during dicing and preserves electrical performance.

Embedded bridge die creates direct vertical power pathways through the substrate bulk, reducing ohmic and dynamic drops compared to circuitous surface routing.

Doped mask layers adjust sidewall angles to improve trench filling and reduce void formation in high aspect ratio gaps.

Low temperature aluminum oxide deposition prevents copper oxidation while enabling solder wetting.

Back-end-of-line programmable resistive elements trim integrated circuit parameters, eliminating large polysilicon resistors and separate non-volatile storage.

Dummy structures planarize deposition surfaces to prevent CMP dishing, reducing metal residue accumulation and leakage current in HKMG CMOS technology.

Silicided gate electrodes paired with a planarizing interlayer insulating layer reduce interconnect resistance variations caused by etching selectivity issues.

A multi-strike process breaks oxide layers on copper bumps to expose un-oxidized surfaces for direct bonding with aluminum pads.

A bypass network coupled in parallel with a blocking capacitor shunts low frequency signals away from the high Q RF path.

A liquid cooling apparatus integrates high emissivity heat dissipating members on system boards to enhance thermal radiation and cooling performance.

A semiconductor substrate uses front-side blind recesses filled with doped polysilicon to create through-wafer electrical connections.

Redundant electrical connectors bridge stacked semiconductor dies to enhance thermal conduction, preventing solder bond failures that cause open circuits.

An elevation-adaptive electrical connection links adjacent semiconductor dies using three-dimensionally formed interconnection plates.

Die attach pads at different elevations increase effective separation distance without altering package footprint.

Simultaneous formation of zero layer and active area alignment marks resolves the trade-off between fabrication simplicity and high precision at the die level.

A photosensitive resin composition uses a biphenyl polyimide precursor to reduce cured film warping.

Vertical stacking via hybrid bonding improves integration density while maintaining compact package size through nested structures.

Conductive through-polymer vias integrate high-density capacitors within semiconductor packages, reducing thermal expansion mismatches and parasitic effects.

Integrating a lateral diode structure with a multivalent metal oxide memory cell reduces leakage current and improves data retrieval accuracy.

A segmented terminal with a cylindrical leading end confines solder to form a reliable fillet on the circuit board.

An integrated circuit package uses a lid structure to define an air cavity, protecting the sensor without chemical protectants.

A ferroelectric random access memory cell structure integrates the upper intermetal dielectric with an etch stop layer to simplify fabrication.

Silicone gel potting material with conductivity-imparting agent reduces leakage current and prevents substrate cracking in power semiconductor modules.

Segmenting lead frame wettability controls solder flow during pressing, preventing voids and overflow while enhancing heat dissipation.

A segmented alignment mark uses opaque and transparent regions to create gray scale contrast for accurate position detection.

A primary solder ball reflows to coat the under bump metallurgy side wall, forming a protective antioxidant layer.

Varying solder resist opening areas distribute thermal stress and prevent cracks at joints.

Laminated heat sink plates with lattice Cu-Mo alloys match alumina expansion, preventing delamination in high-output GaN devices.

Leadframes with curvilinear slots enable singulation using standard saw blades.

A semiconductor module uses vertically stacked dies with separated peripheral pads to reduce substrate area.

Segmented spacer patterning controls line widths and prevents overheating in sub-38nm semiconductor interconnects.

A prefabricated substrate uses a thick first conductor layer to absorb heat from mounted components.

Sealing resin insulating section maintains uniform thickness to prevent filler clogging in narrow gaps during compression molding.

Reflowed conductive bumps protrude above the molded structure to increase stacking yields and reduce footprint area without contamination.

A movable baffle system adapts to component presence on printed circuit boards to direct airflow effectively.

This assembly integrates LED chip transfer and phosphor film formation into one step, eliminating separate manufacturing stages that increase cost and cycle time.

Overlapping signal and grounding vias shift transmission horizontally, reducing leakage loss while maintaining mechanical strength for 80 GHz signals.