Elevation-adaptive interconnection plates for compact semiconductor packages
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Solution Overview
Problem
The existing semiconductor package designs face challenges in minimizing the inter-die distance, which limits the packaged size and increases on-resistance due to the use of transverse bond wires that require larger margins and clearances, making it difficult to achieve smaller, more efficient power MOSFET packages for portable devices.
Innovation Solution
The implementation of an elevation-adaptive electrical connection using an L-shaped leadframe route and three-dimensionally formed interconnection plates that accommodate elevation differences between semiconductor dies, reducing the inter-die distance by eliminating the need for straight transverse bond wires and allowing for a more compact package footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If transverse bond wires are used to connect semiconductor dies, then electrical connection between dies is achieved, but the inter-die distance increases and package size increases
Solution Approach 1:
The patent transitions from planar transverse bonding to three-dimensional vertical bonding. The second die is bonded atop the first die in a vertical arrangement, eliminating the need for transverse bond wires and reducing the inter-die distance to minimal spacing only, thereby resolving the contradiction between connection reliability and distance reduction.
Solution Approach 2:
Instead of connecting dies horizontally through transverse bond wires, the patent inverts the connection approach by bonding the second die vertically atop the first die. This inversion eliminates the need for long transverse wires and their associated clearances, achieving both compact size and reliable electrical connection.
2Area of stationary object
If transverse bond wires with larger margins and clearances are used, then electrical connection is achieved, but package footprint increases
Solution Approach 1:
The patent moves the bonding operation from the planar domain to the vertical domain. By bonding the second die atop the first die, the package footprint is reduced to minimal die spacing, and the manufacturing process is simplified to direct vertical bonding without complex wire routing and clearance requirements.
3Reliability
If straight transverse circuit routing is used, then circuit connection is achieved, but inter-die distance and parasitic impedance increase
Solution Approach 1:
The patent changes the circuit routing from horizontal transverse paths to vertical paths through the stacked die configuration. This dimensional change minimizes the circuit path length between dies, reducing parasitic impedance while maintaining reliable electrical connection through direct vertical bonding.
Data Source
AI summary
A semiconductor package is disclosed for packaging two adjacent semiconductor dies atop a circuit substrate. The dies are separated from each other along their longitudinal edges with an inter-die distance. An elevation-adaptive electrical connection connects a top metalized contact of die two to the bottom surface of die one while accommodating for elevation difference between the surfaces. The elevation-adaptive electrical connection includes:a) An L-shaped circuit route that is part of the circuit substrate, extending transversely from a die one longitudinal edge and placing an intermediate contact area next to a die two transverse edge.b) An interconnection plate connecting the top metalized contact area of die two with the intermediate contact area while being formed to accommodate for elevation difference between the contact areas.Consequently, the semiconductor package reduces the inter-die distance from an otherwise direct transverse circuit routing between the longitudinal edges of the dies.