Power Semiconductor Apparatus Insulating Section Thickness Control
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Solution Overview
Problem
Existing power semiconductor apparatuses face challenges in downsizing while maintaining high insulation reliability and heat dissipation due to issues with filler clogging and uneven thermal conductivity resin interfaces, leading to increased module size and reduced withstand voltage.
Innovation Solution
A power semiconductor apparatus with a lead frame, power die pad, and sealing resin that includes an insulating section with a uniform thickness of 1 to 4 times the maximum particle diameter, and a hollow above the power die pad, using compression molding to ensure uniform filling and high thermal conductivity, thereby preventing electric field concentration and enhancing insulation reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If transfer molding method is used to form insulating section, then sealing resin can be supplied into narrow gaps, but it is difficult to form insulating section with uniform thickness and filler gets clogged
Solution Approach 1:
The patent changes the thickness parameter of the insulating section to be 1 to 4 times the maximum particle diameter of filler particles. This parameter optimization prevents filler clogging while ensuring uniform thickness, resolving the contradiction between manufacturing precision and ease of manufacture.
Solution Approach 2:
The patent introduces a resin layer as an intermediary between the filler particles and the narrow gaps. This resin layer acts as a mediator that allows filler particles to be properly positioned without getting clogged, enabling both uniform thickness and ease of manufacture.
2Ease of manufacture
If insulating section thickness is increased to prevent filler clogging, then filler can flow through narrow gaps, but module size increases and heat dissipation performance decreases
Solution Approach 1:
The patent optimizes the insulating section thickness parameter to the specific range of 1 to 4 times the maximum filler particle diameter. This precise parameter control allows filler to flow through narrow gaps without excessive thickness increase, preventing module size expansion while maintaining manufacturability.
3Temperature
If high thermal conductivity resin is molded separately on under surface, then thermal conductivity is improved, but interface bonding deteriorates and insulation reliability decreases
Solution Approach 1:
The patent merges the high thermal conductivity resin molding with the main sealing resin molding into a single integrated process. This combination ensures uniform thickness distribution and proper bonding at interfaces, maintaining both thermal conductivity and insulation reliability without the defects of separate molding.
Solution Approach 2:
The patent ensures homogeneous distribution of high thermal conductivity resin throughout the insulating section by controlling the molding process. This homogeneity prevents void formation and ensures uniform bonding, maintaining both thermal performance and insulation reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a smaller power semiconductor device with higher heat generation density, reducing module size and improving insulation reliability by preventing filler clogging and ensuring uniform thermal conductivity, thus maintaining high withstand voltage.
Implementation Method 1
using compression molding to ensure uniform filling
Implementation Method 2
ensuring uniform thermal conductivity
Implementation Method 3
preventing electric field concentration and enhancing insulation reliability
Data Source
AI summary
A lead frame (4) includes an inner lead (5), an outer lead (2) connected to the inner lead (5), and a power die pad (7). A power semiconductor device (9) is bonded onto the power die pad (7). A first metal thin line (11) electrically connects the inner lead (5) and the power semiconductor device (9). Sealing resin (1) seals the inner lead (5), the power die pad (7), the power semiconductor device (9), and the first metal thin line (11). The sealing resin (1) includes an insulating section (15) directly beneath the power die pad (7). A thickness of the insulating section (15) is 1 to 4 times a maximum particle diameter of inorganic particles in the sealing resin (1). A first hollow (14) is provided on an upper surface of the sealing resin (1) directly above the power die pad (7) in a region without the first metal thin line (11) and the power semiconductor device (9).


