3D Semiconductor Package Hybrid Bonding for Integration Density
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high-density integration and compact package sizes due to limitations in three-dimensional integration technology for wafer level packaging, which hinders the reduction of size and improvement of performance in electronic components.
Innovation Solution
The method involves forming through vias and conductive pillars on a substrate, followed by hybrid bonding with semiconductor chips, and using a redistribution layer to connect conductive elements, enabling efficient integration and compact packaging through advanced bonding and encapsulation techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional integration technology for wafer level packaging is used, then integration density is improved, but package size reduction is hindered
Solution Approach 1:
The patent transitions from planar two-dimensional packaging to three-dimensional vertical stacking architecture. Multiple semiconductor dies are stacked vertically with intermediate transfer substrates, enabling integration density improvement while maintaining compact package footprint through spatial dimensionality change.
Solution Approach 2:
The patent implements a nested structure where semiconductor dies are stacked within a package cavity, with each die nested on top of the previous one. The intermediate transfer substrates are nested within the package structure, allowing multiple functional layers to be contained within a compact volume, thus improving integration density without proportionally increasing package size.
2Quantity of substance
If minimum feature size is reduced to improve integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the packaging process into multiple discrete stages: die preparation, intermediate transfer substrate formation, stacking, and encapsulation. This segmentation allows each stage to be optimized independently, reducing the cumulative precision requirements compared to a single-step process, thereby enabling higher integration density without proportionally increasing manufacturing precision demands.
3Length of moving object
If hybrid bonding is used to connect conductive elements, then interconnect distance is reduced, but bonding process complexity increases
Solution Approach 1:
The patent performs preliminary preparation of bonding surfaces on semiconductor dies and intermediate transfer substrates before the actual bonding process. This includes forming conductive pads, patterning, and surface treatment in advance, which simplifies the final hybrid bonding step by ensuring surfaces are pre-conditioned for optimal bonding, thus reducing interconnect distance without excessive bonding process complexity.
Data Source
AI summary
A semiconductor chip including a die substrate, a plurality of first bonding structures, a plurality of conductive elements, at least one integrated device, a plurality of conductive posts and a protection layer is provided. The first bonding structures are disposed on the die substrate. The conductive elements are disposed on the die substrate adjacent to the first bonding structures. The integrated device is disposed on the die substrate over the first bonding structures, wherein the integrated device includes a plurality of second bonding structures and a plurality of conductive pillars, and the second bonding structures are hybrid bonded to the first bonding structures. The conductive posts are disposed on the conductive elements and surrounding the integrated device. The protection layer is encapsulating the integrated device and the conductive posts.