Resistor Sheet Resistance Matching via Mask Algorithm

The patent applies preliminary action by pre-calculating the sheet resistance mismatch between different foundries during the design phase. The system estimates the resultant sheet resistance based on known foundry process parameters and proactively determines the required implant dosage adjustment before manufacturing begins. This eliminates the need for additional masking operations during production, as the design is already optimized for the target foundry's process characteristics.

The patent implements parameter changes by modifying the ion implantation dosage parameter in the resistor structure design. Instead of adding masking operations to adjust sheet resistance, the system changes the implant dosage parameter during design to compensate for foundry-specific process variations. This parameter adjustment achieves the desired sheet resistance precision while maintaining manufacturing simplicity.

The patent enables adaptability across different foundries by implementing parameter changes in the resistor design based on the target foundry's process characteristics. The system calculates the sheet resistance mismatch for different foundries and adjusts the implant dosage parameter accordingly. This allows the same design to achieve consistent sheet resistance precision across multiple foundries without requiring additional masking operations, thereby maintaining both precision and adaptability.

The patent achieves universality by creating a design system that can adapt to multiple foundries' processes through parameter adjustment. The resistor structure design with modified implant dosage serves multiple functions: it maintains sheet resistance precision for the target foundry while also enabling portability to other foundries. This multi-functional design eliminates the need for foundry-specific masking operations.