Wide-Gap Semiconductor Device Schottky Junction Design
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Solution Overview
Problem
Wide gap semiconductor devices, such as silicon carbide, experience increased leak current and discharge issues due to trapped electrons at the interface between insulating layers and the semiconductor material, leading to band lifting and inversion layers, especially when subjected to negative voltages.
Innovation Solution
A wide gap semiconductor device design where an insulating layer extends to the end part and a second electrode is placed between the first electrode and the end part, forming a Schottky junction with the semiconductor layer, preventing electron trapping and band lifting, thereby reducing leak current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an insulating layer is provided to prevent discharge between the electrode and end part, then discharge prevention is improved, but interface levels trap electrons causing increased leak current
Solution Approach 1:
A second electrode is introduced as an intermediary element between the first electrode and the end part of the semiconductor device. This second electrode forms a Schottky junction with the semiconductor layer, creating a potential barrier that prevents electron trapping at the insulating layer interface while still providing discharge prevention coverage through the insulating layer extending to the end part.
Solution Approach 2:
The invention changes the electrical parameters at the critical interface region by forming a Schottky junction with a second electrode. This creates a specific potential distribution that modifies the energy band structure, preventing band lifting and inversion layer formation that would otherwise occur at the insulating layer/semiconductor interface under negative voltage conditions.
2Reliability
If the insulating layer extends to the end part to prevent discharge, then discharge suppression is improved, but electrons are trapped at the interface causing band lifting and inversion layer formation
Solution Approach 1:
The second electrode acts as a mediator that eliminates the harmful interface effect. By forming a Schottky junction between the second electrode and the semiconductor layer, it creates a controlled potential barrier that prevents the formation of inversion layers and trapped electron accumulation at the insulating layer interface.
Solution Approach 2:
The invention converts the potentially harmful interface between insulating layer and semiconductor into a beneficial structure by extending the insulating layer to the end part while simultaneously introducing a second electrode that forms a Schottky junction. This Schottky junction creates a favorable potential distribution that prevents band lifting and inversion layer formation, turning the interface region from a harmful to a beneficial structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses discharge and decreases leak current by preventing electron trapping and band lifting, enhancing the reliability and performance of wide gap semiconductor devices.
Implementation Method 1
the second electrode and the first conductive-type semiconductor layer forms the schottky junction
Data Source
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AI summary
A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).