Semiconductor Light Emitting Device Metal Pillar Insulating Film

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor light emitting devices face challenges in downsizing while maintaining reliability, particularly in flip chip mounting where solder wettability issues lead to tombstone defects and electrical shorts due to exposed conductive surfaces during the mounting process.

Innovation Solution

The semiconductor light emitting device incorporates a structure with insulating films on the side faces of metal pillars, which have poorer solder wettability than the metal, and a resin layer that covers the pillars, preventing solder wetting and exposure, thus avoiding bonding defects and shorts. This structure includes a semiconductor layer with a light emitting layer, electrodes, interconnect layers, and metal pillars connected by insulating films and a resin layer for enhanced mechanical strength and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If solder is used to perform flip chip mounting of LED chip, then electrical connection is achieved, but tombstone defects and electrical shorts occur due to poor solder wettability and exposed conductive surfaces

Engineering Contradiction:
Improvebonding reliabilityVSAvoidtombstone defects and electrical shorts
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

An insulating film is introduced as an intermediary layer between the solder and the conductive metal pillar. This insulating film has better solder wettability than the metal pillar surface, allowing solder to properly wet and bond to the pillar without causing tombstone defects or electrical shorts to adjacent conductors.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The insulating film is selectively formed only on specific portions of the metal pillar that require solder bonding. This localized treatment provides different surface properties in different regions: the insulating film-covered regions have good solder wettability for reliable bonding, while other regions maintain their original metal properties.

Inventive Principle:
Principle #3Local quality

2Volume of moving object

If device size is reduced for downsizing, then integration density increases, but manufacturing precision and reliability become more difficult to maintain

Engineering Contradiction:
Improvedevice sizeVSAvoidmounting precision
Core Design Contradiction:
Volume of moving objectVSManufacturing precision

Solution Approach 1:

The solder wettability parameter of the metal pillar surface is changed by forming an insulating film layer. This parameter change enables reliable solder bonding even in downsized devices where manufacturing tolerances are tighter and precision is more critical.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If metal pillars are exposed without insulation, then electrical connectivity is maintained, but solder wets the metal surface causing bonding defects

Engineering Contradiction:
Improvebonding qualityVSAvoidsolder wetting issues
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The insulating film serves as a mediator between the solder and metal pillar, providing a surface that promotes proper solder wetting and bonding while preventing the harmful effects of direct solder contact with the metal surface, such as tombstone defects and electrical shorts.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS8957450B2Semiconductor light emitting device and method for manufacturing same
Publication Date: 2015.02.17 SAMSUNG ELECTRONICS CO LTD
  • US8957450B2 patent drawing
  • US8957450B2 patent drawing
  • US8957450B2 patent drawing

AI summary

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a film covering a side face of the first metal pillar and a side face of the second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The film has a solder wettability poorer than a solder wettability of the first metal pillar and a solder wettability of the second metal pillar. The resin layer covers at least part of the film.