Diode Laser Spot Heating for Epitaxial Wafer Uniformity

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Solution Overview

Problem

Semiconductor substrates experience temperature non-uniformity during processing, leading to film thickness non-uniformity due to valleys formed at certain locations, despite precise heating control.

Innovation Solution

A thermal process chamber with a high-energy radiant source assembly that provides localized heating to cold regions on the substrate, using a combination of heating elements and a movable high-energy radiant source assembly to improve temperature uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If heating lamps are used to heat the substrate, then the substrate can be heated to required temperature, but temperature non-uniformity occurs causing valleys at certain locations

Engineering Contradiction:
Improvesubstrate temperatureVSAvoidfilm thickness uniformity
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent introduces a movable high-energy radiant source assembly that provides localized heating to specific regions of the substrate. This assembly can be positioned to target cold spots or valleys where additional heating is needed, creating non-uniform heating distribution that compensates for the uniform heating pattern of traditional lamps, thereby improving film thickness uniformity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The high-energy radiant source assembly is made movable along a track, allowing dynamic adjustment of its position to different locations on the substrate. This dynamic capability enables the system to adaptively heat different regions as needed, transforming the static heating pattern into a flexible, adjustable one that can eliminate temperature non-uniformity

Inventive Principle:
Principle #15Dynamics

2Measurement precision

If precise control over heating source is implemented, then substrate temperature can be controlled within strict tolerances, but valleys still form at certain locations

Engineering Contradiction:
Improvetemperature control precisionVSAvoiddeposition uniformity
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

Even with precise overall temperature control, localized valleys form due to geometric or process factors. The movable high-energy radiant source assembly addresses this by providing targeted local heating to specific valleys or cold spots, allowing the system to maintain precise overall temperature control while simultaneously correcting local non-uniformities that affect deposition uniformity

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If a high-energy radiant source assembly is added to provide localized heating, then temperature uniformity is improved, but device complexity increases

Engineering Contradiction:
Improvetemperature uniformityVSAvoidheating system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The high-energy radiant source assembly is designed to move along a track rather than requiring multiple fixed sources. This dynamic approach reduces system complexity compared to having multiple stationary heating elements, as a single movable source can service the entire substrate area sequentially, achieving temperature uniformity improvement with minimal additional components

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces temperature non-uniformity and film thickness variations, enhancing deposition uniformity and substrate quality by focusing energy on specific areas during rotation.

Implementation Method 1

a high-energy radiant source assembly disposed over the first plurality of heating elements... provides localized heating to cold regions on the substrate

Methodology Applied
Scientific EffectRadiant heating: Thermal Radiation

Implementation Method 2

a first plurality of heating elements disposed over the first dome... the first dome is disposed between the first plurality of heating elements and the substrate support

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentEP4138121A1Diode laser for wafer heating for epi processes
Publication Date: 2023.02.22 APPLIED MATERIALS INC
  • EP4138121A1 patent drawingFigure 1
  • EP4138121A1 patent drawingFigure 2
  • EP4138121A1 patent drawingFigure 3

AI summary

A process chamber, comprising: a first transmissive member (112); a second transmissive member (114); a substrate support (102) disposed between the first transmissive member (112) and the second transmissive member (114); a first plurality of heating elements (104) disposed over the first transmissive member (112), wherein the first transmissive member (112) is disposed between the first plurality of heating elements (104) and the substrate support (102); a lid (116) disposed over the first plurality of heating elements (104); a support member (132) disposed on the lid (116); a support block (614) disposed on the support member (132); and a spot heating source assembly (108) disposed on the support block (614), wherein the spot heating source assembly (108) comprises a radiant spot heating source pointed at the substrate support (102).