Electric Discharge Tubes TRIZ Cases

A plasma ignition circuit uses a switch controller to capacitively apply secondary RF voltage for remote plasma source activation.

A beam deflector adjusts the x-direction angle of an ion beam to intersect a reference trajectory at the scan origin.

Segmenting the specimen stage allows independent removal for cleaning, resolving the trade-off between large wafer capacity and maintenance difficulty.

Coupling a single radio-frequency power source to multiple discharge electrode points generates symmetrical electric fields for thin film deposition.

Segmented gas channels deliver independent process gases to a capacitively coupled plasma source, preventing pre-mixing for atomic layer deposition.

A sputtering target material uses controlled hydrogen levels and specific particle size distributions to achieve high mechanical strength.

Movable radiant sources compensate for substrate valleys, eliminating film thickness non-uniformity during epitaxial growth.

A monochromator slit plate uses multiple energy-selecting slits and measuring sections to detect active beam intensity for automated adjustment.

Confined bonding material in recesses prevents plasma erosion and particle contamination, extending operational lifetime.

A power terminal features a widened, thinned, and lowered section embedded in the connector tongue.

A multi-beam particle optical system directs parallel charged beams onto an object plane using a deflector arrangement and detects traversing particles.

Sequential injection of CF4 and CHF3 gases reduces pattern roughness in CMOS image sensor etching while maintaining process continuity.

Segmenting detection signals into multiple units allows the processor to isolate compositional data, minimizing topographic contrast in low voltage imaging.

Lower electrode RF power generates plasma at the substrate surface to deposit conformal thin films.

Flame-assisted flash sintering produces dense ceramic films at atmospheric pressure, eliminating vacuum chamber costs and material waste.

An electromagnetic field deflects sputtered particles away from the substrate, reducing defects caused by target bowing and thermal stress.

Dry plasma etching silicon anti-reflective coating layers using segmented gas chemistries.

Radial segment shielding isolates RF noise and prevents eddy current dissipation, maintaining etch-rate uniformity across plasma processing units.

Alternating V-rich and Me-rich layers manage thermal stress and chemical interaction during machining of sticky alloys.

Pivotable joints and elastomers in the lift pin unit compensate for thermal contraction stress during cryogenic cooling.

A transmissive final lens portion uses low atomic number electrodes to transmit X-rays and light emissions from a sample.

Segmented vacuum chamber and periodic ion beam pulsing reduce evacuation time and thermal damage during sample preparation.

A processing method removes nitrified regions on silicon protrusions using selective isotropic etching.

Conductive plasma shield covers temperature measurement terminal to block abnormal discharge and signal interference from plasma.

Segmented substrate electrodes apply phased low-frequency voltages to control ion incident angles, reducing sidewall tapering in semiconductor trench etching.

A master clock synchronizes control signals between plasma process subsystems to reduce delay times below one percent of recipe step time.

A hybrid lithography method co-aligns optical and electron beam fabrication levels using a high-Z alignment target structure.

Segmented processing chambers with standby units maintain throughput and reduce substrate wastage when primary modules fail.

Ferrite transformer RF sources channel magnetic fields to induce plasma, eliminating unwanted electrical fields and metal contamination from ion bombardment.

Curved frustoconical aperture minimizes surface area exposed to primary beam, preventing magnetic lens trapping of secondary electrons that degrade spot size.

A plug block module with an adapter plug and latch connection secures the surface coil interface.

Calculate integral values from differentiated light emission signals to identify unstable plasma conditions early and prevent wafer defects.

A dual-mode physical vapor deposition system uses a collimator as both target and confinement structure to manage plasma power and ion bombardment.

Charged particle beam writing apparatus corrects positional deviations using backside topography data to ensure precise pattern placement.

A pattern correction controller adjusts multi-beam patterning tool beams using captured image data to maintain alignment.

A PTFE screen shields substrates from plasma damage while enabling high-rate amorphous carbon deposition on organic materials.

Alternating fluorocarbon and hydrofluorocarbon plasma cycles etch multilayer silicon films with high precision.

Obtuse recessed corners redirect ion trajectories to maintain sputtering efficiency and prevent deposit accumulation at processing chamber components.

A gas shroud confines the plasma stream to reduce etch damage on surrounding regions.

Joining multiple silicon members with boron oxide reduces manufacturing costs by allowing smaller crystal ingots while maintaining structural integrity.

Inner-side extraction geometry resolves spatial clearance constraints for stable beam output across wide energy ranges without increasing device size.

Multi-precursor gas mixtures generate plasma for selective atomic dopant implantation, resolving species ratio trade-offs without complex beamline equipment.

Switching from continuous wave to pulsed plasma reduces nitrogen radical concentration, preventing surface nitridation during tungsten etching.

Low energy electron beams prepare uniform fuel cell catalysts while minimizing harmful X-ray emissions.

A semiconductor fault detection system monitors sensor outputs during wafer processing to identify anomalies using trained models.

Dry etching removes trench footing and dummy gates in transistor fabrication, reducing leakage current by improving gate dielectric quality.

An annular shield member with a protruding portion protects the ground electrode from reaction product adhesion, ensuring stable DC voltage application.

Oxygen in plasma doping forms a thin oxide layer on fin-semiconductor regions to enhance impurity activation.