Plasma Stability Determination via Light Emission Intensity
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Solution Overview
Problem
Existing plasma processing methods fail to reliably determine plasma stability, leading to wafer defects due to unstable plasma conditions, which are not detected until downstream defect inspection, resulting in reduced product yield.
Innovation Solution
A method involving the detection of light emission intensity in the plasma processing container, generating functions to represent the relationship between light emission intensity and time, differentiating and integrating these functions to calculate an integral value, which determines plasma stability based on a predetermined threshold.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If light emission intensity is monitored to determine plasma stability, then plasma stability can be accurately determined, but the device complexity increases due to additional detection and calculation mechanisms
Solution Approach 1:
The patent replaces complex physical measurement systems with optical detection. Instead of using complex electrical probes or mechanical sensors to measure plasma parameters, the system uses a simple light emission intensity detector (optical sensor) to monitor plasma stability. The complex calculations are performed through software algorithms (differentiation and integration of light intensity signals) rather than complex hardware systems, resolving the contradiction by substituting mechanical/electrical complexity with optical simplicity and computational processing.
2Reliability
If plasma stability is monitored continuously during processing, then abnormalities can be detected early, but the loss of time for data processing and analysis increases
Solution Approach 1:
The patent implements real-time feedback by continuously monitoring light emission intensity during plasma processing and immediately processing the signals through differentiation and integration calculations. The system provides instantaneous feedback on plasma stability by comparing calculated values against predetermined thresholds, enabling early abnormality detection without significant time delay. This continuous feedback loop ensures that abnormalities are detected and addressed promptly while maintaining efficient processing throughput.
3Manufacturing precision
If the light emission detection mechanism is added to monitor plasma stability, then manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent introduces light emission intensity as an intermediary parameter that indirectly reflects plasma stability and processing quality. Instead of directly measuring complex plasma parameters (electron density, temperature, ion flux) that would require complex instrumentation, the system uses light emission intensity—a simple optical signal—as an intermediary that correlates with plasma stability. This intermediary approach enables manufacturing precision improvement while avoiding direct complexity in the measurement system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for accurate determination of plasma stability, preventing wafer defects by identifying unstable plasma conditions early, thus improving product yield and reducing defective wafer production.
Implementation Method 1
detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container
Data Source
AI summary
A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.


