Schottky Diode Silicide Nitride Stack for Surface Trap Suppression
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Solution Overview
Problem
The scaling down of semiconductor devices increases complexity and leads to current leakage due to surface traps formed during the formation of metallic layers in diodes, which affects the Schottky barrier and device performance.
Innovation Solution
Incorporating a stack of metal silicide nitride and metal silicide layers, where nitrogen atoms in the metal silicide nitride layer prevent the formation of surface traps by introducing nitrogen through a capping layer with a cubic crystal structure during the silicidation process, reducing current leakage by 10% to 50%.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase storage capacity and processing speed, then device performance is improved, but manufacturing complexity increases and surface trap formation in metallic layers causes current leakage
Solution Approach 1:
The patent applies preliminary action by performing surface treatment with nitrogen-containing gas before the metallic layer is fully formed and before devices are scaled down. This pre-treatment prevents surface trap formation in advance, addressing the manufacturing complexity issue before it arises in the scaled-down devices. The nitrogen diffusion is initiated during the silicidation process itself, rather than requiring a separate post-processing step.
Solution Approach 2:
The patent uses nitrogen atoms as an intermediary substance that diffuses into the metallic layer during silicidation. This nitrogen intermediary prevents surface trap formation by modifying the metallic layer's surface properties. The nitrogen acts as a mediator between the silicidation process and the final diode performance, reducing current leakage without requiring complex manufacturing changes.
2Reliability
If metallic layers are formed during silicidation process, then electrical connectivity is achieved, but surface traps form causing current leakage that reduces device reliability
Solution Approach 1:
The patent converts the potentially harmful silicidation process into a beneficial opportunity by simultaneously introducing nitrogen during the same process. The silicidation that creates the metallic layer also provides the conditions for nitrogen diffusion that prevents surface trap formation. This transforms a process that normally generates harmful surface traps into one that simultaneously eliminates them.
Solution Approach 2:
The patent changes the chemical composition parameter of the metallic layer by introducing nitrogen atoms during silicidation. This parameter change modifies the surface properties of the metallic layer, preventing surface trap formation. The nitrogen concentration in the metallic layer is controlled to optimize both the prevention of surface traps and the maintenance of electrical connectivity.
3Object-generated harmful factors
If nitrogen-based surface treatment is applied during silicidation, then surface traps are prevented and current leakage reduces by 10% to 50%, but process parameters must be precisely controlled
Solution Approach 1:
The patent merges the nitrogen-based surface treatment with the silicidation process into a single unified operation. Instead of being separate sequential steps, the nitrogen diffusion and metallic layer formation occur simultaneously during the same processing window. This merging reduces the number of process parameters that need independent control and simplifies the overall manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of metal silicide nitride layers effectively mitigates surface traps, enhancing diode performance by reducing current leakage and maintaining the Schottky barrier, thus improving device reliability and efficiency.
Implementation Method 1
forms a cubic crystal structure capping layer to facilitate nitrogen diffusion
Data Source
AI summary
A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.