Semiconductor Devices TRIZ Cases

A silicone-based curable composition keeps dyes from aggregating while transmitting 800-900 nm infrared light and blocking visible light.

A molded symbol body with LED recesses keeps the icon visible when off while delivering bright, low-depth illumination on transparent surfaces.

Alternating etch-selective layers and sacrificial patterning form forksheet nanosheet channels with tighter dimensional control and higher device density.

A recessed GaN multi-channel structure suppresses trap sites from etch damage, enabling stable gate operation and normally off behavior.

A doped Ge or Si absorption layer between electrodes boosts infrared sensitivity while keeping broadband sensor manufacturing simpler and lower cost.

A shared ReRAM drain between stacked vertical transistors boosts current density in less area while faceted epitaxy helps reduce electroforming randomness.

A wider-band-gap barrier layer suppresses electron trapping in a thin GaN electron traveling layer, improving transient response without harming crystallinity.

An aluminum conductive body with cavity and protrusions improves UV LED light extraction, heat dissipation, and burr control during cutting.

Patterned nano-photonic layers convert trapped surface modes into directional light, boosting LED EQE and brightness at high current density.

Multiple ferroelectric gate layers create negative capacitance in a FinFET, cutting leakage and subthreshold swing while improving switching speed.

Separated p-type protection regions and a higher-doped spreading layer redirect avalanche breakdown away from the gate oxide in SiC trench MOSFETs.

Non-mirror-symmetric doping and sidewall geometry in a GaN HEMT gate selectively control Jgs and Jgd to raise voltage tolerance and cut power loss.

A high-permittivity ferroelectric interface induces surface potential differences for continuous contactless charging without magnetic or mechanical coupling.

A monocrystalline silicon gate region cuts GIDL in buried-gate transistors while a metal composite structure keeps wordline resistance low.

Selective removal of etch-damaged ridge layers lets GaN HEMTs raise effective gate width and on-current without sacrificing stability.

A graded SiGe base in a lateral SOI bipolar transistor cuts capacitance and collector resistance for high-speed, high-voltage RF use.

Ferroelectric polarization sets different MISFET threshold voltages on SOI without extra masks or back gate control, cutting layout complexity.

A high-κ interfacial layer cuts electric field stress in silicon-channel FeFETs, enabling over 10^12 cycles with low write voltage.

Alternating InGaN and AlGaN layers tune lattice parameter for high-indium growth substrates while reducing V-pit density and improving relaxation.

Laser-formed protrusions and adhesive units enable precise batch transfer of LED elements with reliable electrical connection for display assembly.

Nitrogen diffused through a silicide nitride stack suppresses diode surface traps, cutting leakage while preserving the Schottky barrier.

Variable-depth substrate recesses increase bonding material volume for stronger board attachment while preserving base-member strength.

Stepped field plate regions spread the electric field at the gate corner and barrier offset edge, cutting peaks that limit GaN breakdown voltage.

Different trench spacing and length let the diode break down before the transistor, preventing failure in integrated reverse-conducting IGBTs.

Separated resist coverings on LED terminals block dicing scrap from bridging contacts during plating, improving electrical isolation.

A shared mask and overlapping low-resistance region keep SiC power MOSFET channel length uniform, improving current density consistency and ruggedness.

A segmented gate dielectric lets EDMOS raise breakdown voltage while limiting on-resistance and reducing fabrication steps.

A hybrid trench gate layout cuts JFET resistance and parasitic gate-drain capacitance while preserving blocking voltage in SiC MOSFETs.

An inclined flush field plate in LDMOS improves electric field distribution near the JFET region without increasing pitch or on-resistance.

A discontinuous implantation region cuts Schottky diode reverse leakage while preserving on-state current through localized high-resistance zones.

A mixed Ohmic-Schottky diode structure suppresses hole injection during reverse recovery, cutting loss and chip area in integrated IGBT designs.

A GaN-supported AlGaN seed and laser lift-off route cuts UV LED wafer cost while lowering dislocation density and enabling substrate reuse.

Vertically stacked nanosheet channels use a high-k gate dielectric and inner spacer to suppress leakage current while preserving scaled MOSFET performance.

An insulating trench splits the TRIAC into two isolated halves to block shunt current, reduce mis-triggering, and improve dv/dt performance.

A dry-etch-resistant gate isolation layer keeps gate and source/drain contacts insulated, preventing shorts in scaled semiconductor structures.

Combining RGB LED layers on one growth substrate cuts transfer steps, reduces alignment errors, and supports higher display resolution.

A carbon-doped silicon gate spacer adds tensile channel stress and blocks oxygen, improving FinFET carrier mobility and source/drain protection.

A seam in the strip isolation structure breaks conductive residue paths, preventing unwanted DRAM cell connections during scaling.

An AlN etch-stop layer and H2/NH3 dry etching stabilize GaN HEMT recess depth and reduce access resistance variation.

A side-contact electrode cuts contact resistance and preserves a larger light-receiving area for faster photodetector response without losing sensitivity.

An embedding insulating film enables bridged emitter regions in trench gate IGBTs, reducing trench spacing and on-voltage while preventing gate-emitter shorts.

A thin low-crystallinity metal surrounding a more crystalline wordline core relieves stress in stacked NAND arrays and helps prevent wafer bowing.

A gate recess reaching the threshold voltage control layer enables normally off nitride devices with lower on-resistance and better yield.

Vertical electrode extensions and dielectric layers reshape the HEMT electric field to raise breakdown voltage and cut impact ionization.

Separating a TRIAC with a trench and dual gates blocks shunt current, reducing noise mis-triggering and improving commutation.

Gradual and abrupt channel doping with oxygen scavenging layers cuts leakage current and improves contact resistance in vertical transistors.

Using SiC and GaN layers, this case shows how transistor structures improve voltage conversion, cut leakage, and support compact high-power packages.

An intermediate-index capping layer and lower-index encapsulation cut red LED interface reflection and improve light extraction.

Dual trench and well-region layout lowers on-resistance and switching energy loss while keeping trench MOSFET fabrication practical.

Slot-shaped field regions around the high-voltage terminal raise breakdown voltage, preserve integration, and help prevent latch-up.

Decreasing reflector housing width redirects radiation to 30°-60° angles, resolving insufficient large-angle emission in backlighting applications.

Triazine and siloxane epoxy compounds prevent yellowing under thermal stress and UV exposure.

Patterned deposited underfill layers provide uniform mechanical support and thermal expansion matching for GaN LEDs during substrate removal.

An Al2O3 dielectric cover layer prevents Si diffusion from a SiO2 protective film into active and p-type layers, maintaining device reliability.

Circular Schottky contacts surrounded by p-type doping suppress reverse leakage current while maintaining low forward voltage drop.

Spatially separated electrode parts improve light emitting efficiency and ESD tolerance without increasing device complexity.

Multi-gate VDMOS transistor design overcomes limited drive current by introducing segmented gates that create multiple parallel conduction channels.

Alternating P and N doped columns in the collector create a super junction structure that reduces resistance while maintaining high breakdown voltage.

A vertical power MOSFET uses a spiral pillar configuration to alleviate electric field concentration in the peripheral region.

Epitaxial growth creates a p-type contact region with uniform impurity concentration, reducing body diode forward voltage and energy loss.

A light emitting diode structure uses a metal-doped indium tin oxide ohmic contact layer to enhance electrical conductivity.

Trenched contacts merge drain and anode functions to remove electrons, lowering on-resistance while maintaining fast switching speed in hybrid IGBT devices.

A semiconductor light-emitting device incorporates a recess in the outer periphery to expose an inner surface facing the side surface.

A semiconductor light emitting device uses a sealing member with rounded corners to reduce stress concentration on the passivation film.

A wider bandgap passivation layer prevents electron trapping in field effect power devices.

A wavelength up-conversion structure converts near-infrared light into visible illumination on an LED chip.

An intermediary photon escape layer with graded refractive index increases photon escape probability by reducing internal scattering.

A three-dimensional gate-wrap-around field-effect transistor structure using III-V semiconductor materials.

A metal ring alters the pinch-off voltage of an InP high electron mobility transistor through electro-chemical effects.

Segmented sapphire substrate regions reduce dislocation density and improve crystal orientation in nitride layers.

Gate electrode acts as etch mask to define trench for self-aligned source metal deposition.

A Schottky electrode extracts carriers to reduce current concentration, preventing breakdown from high electric field density at the anode edge.

Metal layers on lateral surfaces reflect stray light, reducing leakage and enabling thinner device profiles.

Varying band gap slopes within the quantum well layer minimizes polarization effects, improving electron-hole recombination probability and luminous output.

A metal lump blocks direct light emission from an emitter to a receiver, resolving interference that degrades sensing performance.

A light emitting device structure uses a mask layer to reduce dislocation and stress in the semiconductor layer.

A trench electrode internal insulating film uses varying thicknesses to reduce parasitic capacitance in semiconductor devices.

Merges P-edge and P-body implantation into a single step, eliminating parasitic leakage and reducing fabrication complexity.

Segmenting the drift layer into distinct functional zones reduces thermal resistance while maintaining manufacturing yield, enabling higher operating voltages.

Segmented conductive and insulating parts in a cavity package structure transmit ultraviolet light through a dedicated transmission member.

Selective oxidation of an InAlAs emitter layer reduces dark current noise, enabling high-frequency detection in lasercom and lidar applications.

A semi-polar oriented LED structure incorporates a buried p-GaN layer grown before the active region to establish opposing internal electric fields.

Segmented small area contacts enhance hole injection into active regions of solid state light sources.

A group III nitride semiconductor layer with controlled oxygen concentration achieves high crystallinity for n-down devices.

Compensation layers modulate electric field distribution to increase nominal breakdown voltage and reduce destructive current filaments.

A photoelectric conversion element uses two sensitive parts with different characteristics to detect incident light spot size.

Segmenting the channel into high mobility and wide bandgap regions mitigates current leakage while maintaining drive current performance.

Resin fills depressed lead grooves to boost adhesion and reduce bending stress on secondary mounting boards.

Segmented metal layers control interdiffusion during heating, preventing gaps at recessed areas and ensuring uniform alloy bonding strength.

A silicide-blocking layer supports a conductive field plate to reduce parasitic capacitance and hot carrier injection while increasing breakdown voltage.

Segmented gate trenches deplete the charge storage layer independently, suppressing short-circuit current while maintaining breakdown voltage.

Replacing adhesive layers with a UV-resistant CYTOP molding part prevents photon-induced bond failure and reduces manufacturing costs.

A semiconductor super-junction device positions n-type source layers at p-type pillar ends to reduce ON resistance.

Hybrid scattering reflectors reduce device thickness while maintaining opacity and improving light extraction efficiency.

Passivation layer etching interrupts the two-dimensional electron gas under the gate to achieve normally-off operation without increasing surface state density.

A lateral avalanche photodiode accelerates charge carriers in a dedicated region before multiplication.

A tunneling transistor uses a fin-shaped structure with heterojunctions to increase driving current.

Curved mesa structures align crystal facets to reduce internal reflection and boost blue light extraction efficiency.

Suspended nitride quantum dots on vertical nanorods overcome aluminum nitride insulation barriers to boost luminance and wavelength control.

A GaN power transistor uses a recessed p-type layer to form a pn junction gate that controls the two-dimensional electron gas channel.