HEMT Electrode Structure With Dielectric Field Shaping for Breakdown Voltage
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Solution Overview
Problem
Conventional high electron mobility transistors (HEMTs) have limitations in breakdown voltage (VBR), which hinders their application in high-power and high-frequency devices, necessitating an improvement to meet industry requirements.
Innovation Solution
A semiconductor device structure is developed, featuring a substrate, semiconductor channel layer, barrier layer, gate electrode, and electrodes with vertical extension portions and dielectric layers, which modify the electric field distribution to enhance breakdown voltage and electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional HEMT structure is used, then device simplicity is maintained, but breakdown voltage is insufficient
Solution Approach 1:
The patent introduces vertical extension portions that extend downward from the electrode bodies into the semiconductor structure, adding a vertical dimension to the electrode configuration. This dimensional change allows the electrodes to interact with multiple layers (semiconductor barrier layer, semiconductor channel layer, and buffer layer) vertically, thereby enhancing breakdown voltage through improved electric field management without requiring complete redesign of the device architecture.
Solution Approach 2:
The patent introduces dielectric layers as intermediary materials positioned between the vertical extension portions of the electrodes and the semiconductor channel layer. These dielectric layers act as mediators that modify the electric field distribution, reduce peak electric field intensity, and prevent direct contact between the electrodes and the channel layer, thereby enhancing breakdown voltage while maintaining device functionality.
2Reliability
If electrode vertical extension portions are introduced, then breakdown voltage is improved, but device complexity increases
Solution Approach 1:
The patent segments each electrode into two distinct parts: a body portion that provides the primary electrical connection and contact with the semiconductor barrier layer, and vertical extension portions that extend downward to interact with deeper layers. This segmentation allows each part to perform its specific function optimally while maintaining overall structural organization and manufacturability.
Solution Approach 2:
The patent applies different properties to different parts of the electrode structure. The body portion is optimized for electrical contact with the barrier layer, while the vertical extension portions are designed to extend into specific regions and interact with the channel layer and buffer layer. This local differentiation of properties allows the electrode structure to address multiple functional requirements simultaneously.
3Reliability
If dielectric layers are added between electrodes and channel layer, then peak electric field intensity is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent incorporates the dielectric layers during the initial fabrication sequence, positioning them between the vertical extension portions of the electrodes and the semiconductor channel layer before final device assembly. This preliminary placement ensures proper alignment and integration without requiring additional complex processing steps later in the manufacturing flow.
Solution Approach 2:
The patent combines the formation of electrode vertical extension portions and dielectric layer placement into an integrated fabrication process. The dielectric layers are positioned and formed as part of the overall electrode structure creation, merging multiple functions (electrode extension, insulation, and electric field management) into a unified manufacturing approach that reduces overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure significantly improves the breakdown voltage and electrical performance of HEMTs, making them suitable for high-power and high-frequency applications by reducing peak electric field intensity and impact ionization rates.
Implementation Method 1
The first dielectric layer is disposed between the vertical extension portion of the first electrode and the semiconductor channel layer
Implementation Method 2
The first dielectric layer is disposed between the vertical extension portion of the first electrode and the semiconductor channel layer
Data Source
AI summary
A semiconductor device includes a substrate, a semiconductor channel layer, a semiconductor barrier layer, a gate electrode, a first electrode, a second electrode, a first dielectric layer and a second dielectric layer. The semiconductor channel layer is disposed on the substrate. The semiconductor barrier layer is disposed on the semiconductor channel layer. The gate electrode is disposed on the semiconductor barrier layer. The first electrode is disposed at one side of the gate electrode. The first electrode includes a body portion and a vertical extension portion. The second electrode is disposed at another side of the gate electrode. The second electrode includes a body portion and a vertical extension portion. The first dielectric layer is disposed between the vertical extension portion of the first electrode and the semiconductor channel layer. The second dielectric layer is disposed between the vertical extension portion of the second electrode and the semiconductor channel layer.