GaN Recessed Multi-Channel Structure for Stable Gate Control
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Solution Overview
Problem
The generation of trap sites during the recess formation in gallium nitride semiconductor devices hinders fast and stable gate operation due to damage in the channel region, making it difficult to control the gate effectively.
Innovation Solution
A semiconductor device manufacturing method that forms a recess in the first semiconductor layer, followed by sequential layers with varying thicknesses on the side and bottom surfaces, minimizing the occurrence of trap sites by forming channels between these layers, and using a gate semiconductor layer to control the channel operation, thereby enabling improved gate control and reduced trap site generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a recess is formed in the channel region to create multi-channel structure, then the channel resistance is reduced and power conversion efficiency is improved, but trap sites are generated due to damage during recess formation, causing unstable gate operation
Solution Approach 1:
The channel layer is segmented into multiple channels by forming recesses, transforming a single-channel structure into a multi-channel structure. This segmentation increases the effective channel width and reduces channel resistance while maintaining reliable operation through proper structural design
Solution Approach 2:
The recess structure is formed preliminarily before channel formation, and the gate electrode is designed to extend over the recess regions in advance. This preliminary structuring prevents damage-induced trap sites by establishing a protective configuration before operational stress is applied
2Ease of operation
If tri-gate or FinFET structure is used to achieve multi-channel, then channel resistance is reduced, but trap sites caused by recess damage prevent fast and stable gate operation
Solution Approach 1:
The gate electrode extends in the vertical dimension over the recess regions, creating an overlay structure that provides additional control dimension. This dimensional extension allows the gate to effectively control channels around the recess without being constrained by the recess geometry, enabling fast and stable operation
Solution Approach 2:
The device employs a composite structure combining the recessed channel layer with an overlaying gate electrode material that extends across the recess regions. This composite configuration integrates the benefits of multi-channel structure with protective coverage, eliminating trap site effects and enabling reliable high-speed operation
Data Source
AI summary
A method of manufacturing a semiconductor device according to various example embodiments includes forming a buffer layer and a first semiconductor layer on a substrate, forming a recess by etching the first semiconductor layer, sequentially forming a second semiconductor layer and a third semiconductor layer on the first semiconductor layer in which the recess is formed, and forming a source and a drain respectively in contact with both sides of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.