Infrared Light Sensing Structure Using Doped Ge Absorption Layer
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Solution Overview
Problem
Current broadband light sensing devices face challenges in manufacturing complexity and cost, particularly in developing devices that can effectively detect infrared light with high sensitivity and efficiency.
Innovation Solution
The proposed solution involves a light sensing device design that includes a channel layer with doped semiconductor layers and a light absorption layer, specifically a doped Ge or Si layer, which is integrated between electrodes to absorb infrared rays, along with an insulating layer and a gate insulating layer configuration, facilitating a simple and cost-effective manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional broadband light sensing devices are used, then infrared light detection capability is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent modifies the bandgap parameter of the semiconductor material by using a heterostructure with a first semiconductor layer (e.g., silicon) and a second semiconductor layer (e.g., germanium or silicon-germanium alloy) with different bandgaps. This parameter change enables the device to detect infrared light while maintaining compatibility with conventional silicon-based manufacturing processes, thus resolving the contradiction between detection capability and manufacturing complexity.
Solution Approach 2:
The patent employs a composite semiconductor structure consisting of multiple layers with different material compositions (silicon, germanium, silicon-germanium). This composite approach allows the device to achieve broadband infrared detection capability while leveraging existing semiconductor fabrication techniques for each material layer, thereby reducing overall manufacturing complexity.
2Reliability
If conventional broadband light sensing devices are used, then infrared light detection capability is achieved, but manufacturing cost increases
Solution Approach 1:
By adjusting the composition ratio of silicon-germanium alloys and controlling the thickness of each layer, the patent optimizes the infrared detection performance while maintaining compatibility with standard semiconductor manufacturing processes. This parameter optimization reduces the need for specialized expensive equipment and processes.
Solution Approach 2:
The patent designs a multi-functional device structure that can detect various wavelengths of infrared light using the same basic heterostructure approach. This universality allows manufacturers to produce a range of infrared sensors using a single manufacturing platform, thereby reducing per-unit costs through economies of scale.
3Measurement precision
If light absorption layer is added to detect infrared light, then detection sensitivity is improved, but device structure becomes more complex
Solution Approach 1:
The patent divides the semiconductor structure into distinct functional layers: a first semiconductor layer for structural support and electrical characteristics, and a second semiconductor layer specifically optimized for infrared light absorption. This segmentation allows each layer to be optimized for its specific function while maintaining overall structural simplicity.
Solution Approach 2:
The patent implements a nested layer structure where the second semiconductor layer with higher infrared absorption coefficient is positioned within or adjacent to the first semiconductor layer. This nesting approach maximizes the light absorption path length and detection sensitivity without significantly increasing the overall device footprint or structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the sensitivity and efficiency of infrared light detection, reduces manufacturing costs, and allows for the production of broadband light sensing devices that can effectively measure light intensity, making them suitable for various electronic applications.
Implementation Method 1
a light absorption layer provided on the channel layer between the first electrode and the second electrode and configured to absorb infrared rays
Implementation Method 2
When light is incident on a depletion region of a silicon photodiode, photocarriers excited by the light are generated, and an amount of photocarriers generated may be read through a circuit. Accordingly, the intensity of incident light may be measured.
Data Source
AI summary
A light sensing device includes a channel layer, a first electrode provided on a first surface of the channel layer, a second electrode provided on the first surface of the channel layer and spaced apart from the first electrode, and a light absorption layer provided on the channel layer between the first electrode and the second electrode and configured to absorb infrared rays, where the light absorption layer includes a doped semiconductor layer.