Semiconductor Light Emitting Device Electrode Configuration
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Solution Overview
Problem
Existing semiconductor light emitting devices face limitations in electrode pattern freedom and light emitting efficiency, with current manufacturing processes not adequately addressing the need for improved external light emission and ESD tolerance.
Innovation Solution
A semiconductor light emitting device is designed with a first electrode part connected to a first conductivity type semiconductor layer via a via structure and a second electrode part overlapping a partial pattern of the first electrode part, both disposed on and under an insulation layer, allowing for enhanced pattern freedom and current distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional electrode structures are used in semiconductor light emitting devices, then the manufacturing process is simpler, but the pattern freedom for electrode parts is limited
Solution Approach 1:
The electrode structure is divided into multiple separate parts: a first electrode part connected to the first conductivity type semiconductor layer, and a second electrode part connected to the second conductivity type semiconductor layer. These parts are spatially separated and can be independently patterned, allowing greater design flexibility while maintaining electrical functionality.
Solution Approach 2:
The patent introduces a vertical stacking dimension by placing the first and second electrode parts at different heights and positions. The first electrode part is disposed at a first position while the second electrode part is disposed at a second position, enabling three-dimensional electrode configuration that increases pattern freedom without proportionally increasing complexity.
2Productivity
If electrode parts are densely arranged to increase light emitting area, then light emitting efficiency improves, but ESD tolerance decreases
Solution Approach 1:
The electrode structure is segmented into spatially separated first and second electrode parts, allowing the light emitting area to be maximized through optimized positioning while maintaining sufficient spacing between electrode regions. This segmentation enables independent optimization of light emission zones and ESD protection zones.
Solution Approach 2:
The patent incorporates an insulation layer between the first and second electrode parts that provides beforehand cushioning against ESD events. This insulation structure is designed in advance to absorb or redirect electrostatic discharge, protecting the densely arranged electrode parts from damage while maintaining their high light emitting efficiency.
3Reliability
If insulation layer is added between electrode parts, then ESD tolerance improves, but device complexity increases
Solution Approach 1:
The insulation layer serves multiple functions simultaneously: it provides ESD protection by electrically isolating the first and second electrode parts, facilitates heat dissipation between adjacent electrodes, and enables precise positioning of electrode parts. This multi-functionality reduces the need for additional dedicated ESD protection structures, thereby limiting the increase in overall device complexity.
Data Source
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AI summary
Provided is a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a second electrode part on the second conductive semiconductor layer; an insulation layer on the second electrode part; and a first electrode part on the insulation layer, a portion of the first electrode part being electrically connected to the first conductive semiconductor layer.