Schottky Diode Implantation Layout for Low Reverse Leakage
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Solution Overview
Problem
Schottky barrier diodes experience reverse leakage current, which reduces circuit efficiency, and existing methods to reduce this leakage also decrease on-state current.
Innovation Solution
A semiconductor device design with a discontinuous implantation region under the top surface, specifically located in the second well region to clamp off-state leakage current, while maintaining the on-state current by avoiding implantation in the first deep well region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If argon ions are implanted in the anode region to reduce reverse leakage current, then reverse leakage current is reduced, but on-state current is reduced
Solution Approach 1:
The implantation region is divided into multiple discrete regions distributed in the anode area, with each region having a size between 0.1 to 1.0 micrometers. These segmented implantation regions create localized high-resistance zones that reduce reverse leakage current while preserving on-state current pathways between the segmented regions
Solution Approach 2:
The patent applies ion implantation locally in specific regions of the anode rather than uniformly across the entire anode area. The implantation regions are positioned at least 0.1 micrometer away from the Schottky interface, creating localized modifications that reduce reverse leakage current while maintaining good Schottky contact properties in the non-implanted areas
2Object-generated harmful factors
If the implantation region is made discontinuous, then reverse leakage current is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses a relatively large number of small implantation regions (each 0.1 to 1.0 micrometer in size) distributed across the anode area. This partial action approach reduces reverse leakage current through multiple localized sites rather than requiring precise positioning of fewer larger regions, thereby reducing manufacturing precision requirements while maintaining effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces reverse leakage current while preserving on-state current, improving the overall performance of the Schottky barrier diode.
Implementation Method 1
argon ions are implanted in the anode region
Implementation Method 2
forming an amorphous semiconductor material with higher resistance
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a first deep well region, at least two second well regions, at least one isolation structure and an implantation region. The first deep well region is disposed in the semiconductor substrate, wherein the first deep well region has a first conductivity type. The second well regions are disposed on the first deep well region, wherein the second well regions have a second conductivity type. The isolation structure covers a portion of the first deep well region and surrounds at least a portion of the second well regions. The implantation region is located under a top surface of the semiconductor substrate, wherein the implantation region has a discontinuous portion, and the discontinuous portion partially overlaps the first deep well region.