2D Dirac Charge-Injection Memory for Speed and Retention
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Solution Overview
Problem
Current memory technologies face challenges in achieving high-speed programming while maintaining long data retention, with volatile memories losing data quickly and non-volatile memories being too slow for high-performance applications.
Innovation Solution
A two-dimensional Dirac material-based charge super injection memory is developed, utilizing a 2D Dirac material channel with a tapered band structure and specific layer materials to form a potential well, enabling ultra-fast programming and extended data retention through uniform carrier acceleration and injection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If volatile memory (SRAM) is used to achieve high-speed programming, then programming speed is improved to nanosecond level, but data retention time deteriorates to far less than 1 second
Solution Approach 1:
The patent merges the advantages of volatile memory (high-speed programming via 2D Dirac material channel) and non-volatile memory (long-term data retention via potential well structure) into a single unified memory device, achieving both nanosecond-level programming speed and extended data retention capability
Solution Approach 2:
The patent changes the physical parameters of the channel material by using 2D Dirac material with ultra-low effective mass and high carrier mobility, enabling ultra-fast charge injection while the potential well structure maintains charge for long-term retention, thus resolving the speed-retention tradeoff
2Duration of action of stationary object
If non-volatile memory (flash memory) is used to achieve long data retention, then data retention time is improved to up to 10 years, but programming speed deteriorates to microsecond level
Solution Approach 1:
The patent changes the channel material parameters by using 2D Dirac material with ultra-low effective mass and high carrier mobility, enabling ultra-fast charge injection at hundreds of picoseconds, which is significantly faster than traditional flash memory while maintaining long-term data retention capability
3Speed
If 2D Dirac material channel is used to achieve ultra-fast charge injection, then programming speed is improved to hundreds of picoseconds, but device complexity increases due to specific layer structure requirements
Solution Approach 1:
The patent segments the memory device into distinct functional layers (blocking layer, charge storage layer, tunneling layer, and 2D Dirac material channel) with specific material requirements for each, allowing optimized performance while managing complexity through modular design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The memory achieves programming speeds of hundreds of picoseconds with data retention exceeding 10 years, integrating the advantages of both volatile and non-volatile memories.
Implementation Method 1
an electron affinity of the channel material is greater than that of a tunneling layer material, an electron affinity of a charge storage layer material is greater than those of a tunneling layer material and a blocking layer material, and a bandgap of the charge storage layer material is smaller than those of the tunneling layer and blocking layer, so that the tunneling layer, the charge storage layer, and the blocking layer collectively form a potential well, thereby ensuring long-term retention of charges
Implementation Method 2
Under applied voltage conditions that preserve the device integrity, the lateral electric field distribution within the two-dimensional Dirac material channel remains highly uniform. This enables carriers to undergo continuous acceleration throughout the channel, progressively gaining energy from the electric field, thereby achieving super charge injection into the storage layer
Data Source
AI summary
A two-dimensional (2D) Dirac material-based charge super injection memory, which includes a substrate, a gate electrode provided on the substrate, a blocking layer covering the substrate electrode and the gate electrode, a charge storage layer provided on the blocking layer, a tunneling layer provided on the charge storage layer, a channel provided on the tunneling layer, and a source electrode and a drain electrode both provided on the channel. The channel material is a 2D Dirac material with a tapered band structure, and the electron affinity of the channel material is greater than that of the tunneling layer material. The electron affinity of the charge storage layer material exceeds those of both the tunneling layer material and the blocking layer material, and the bandgap of the charge storage layer material is smaller than those of the tunneling layer material and the blocking layer material.