2D Dirac Source Channel Structure for Low-Leakage IC Scaling
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Solution Overview
Problem
As integrated circuit devices are downscaled, they face challenges in reducing power consumption, particularly in applications like IoT and AI storage devices, due to increased leakage currents from hot electron injection.
Innovation Solution
Incorporating a two-dimensional (2D) Dirac source material in the channel regions and source regions of the integrated circuit devices, enabling cold electron injection to reduce leakage currents and minimize power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If integrated circuit devices are downscaled to reduce size, then device dimensions are reduced, but leakage currents increase due to hot electron injection
Solution Approach 1:
The patent changes the material parameter of the channel region from conventional silicon to two-dimensional Dirac source material (such as graphene), which fundamentally alters the electron transport properties. This material substitution enables cold electron injection mechanisms that suppress hot electron injection, thereby reducing leakage currents despite device downsizing
Solution Approach 2:
The patent employs a composite structure combining two-dimensional Dirac source material with conventional semiconductor materials. The 2D material forms the channel region while being integrated with standard CMOS fabrication processes, creating a hybrid device that achieves low-power operation without complete architectural redesign
2Ease of manufacture
If conventional materials are used in channel regions, then manufacturing is easier, but power consumption increases due to hot electron injection
Solution Approach 1:
The patent modifies the material composition parameter of the channel region by introducing two-dimensional Dirac source material. This change enables cold electron injection that reduces power consumption while the patent maintains compatibility with existing semiconductor manufacturing techniques, balancing ease of manufacture with energy efficiency
Solution Approach 2:
The patent substitutes the conventional hot electron injection mechanism with cold electron injection by using two-dimensional Dirac source material. This replacement fundamentally changes the electron transport mechanism, reducing energy loss while maintaining device functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of 2D Dirac source material in channel and source regions enhances electron mobility, reducing leakage currents and resulting in integrated circuit devices with lower power consumption and improved performance.
Implementation Method 1
Incorporating a two-dimensional (2D) Dirac source material in the channel regions and source regions of the integrated circuit devices, enabling cold electron injection to reduce leakage currents and minimize power consumption
Implementation Method 2
The use of 2D Dirac source material in channel and source regions enhances electron mobility, reducing leakage currents and resulting in integrated circuit devices with lower power consumption and improved performance
Data Source
AI summary
An integrated circuit device including a substrate including a word line trench and a first recess adjacent to a first side wall portion of an inner wall of the word line trench, a channel region on the inner wall and extending in a first direction parallel to an upper surface of the substrate, the channel region including a first channel region in a portion of the substrate adjacent to the inner wall and a second channel region on the inner wall and including a two-dimensional (2D) material of a first conductivity type, a gate insulating layer on the second channel region, a word line on the gate insulating layer and inside the word line trench, and a source region in a first recess and including the 2D material of the first conductivity type may be provided.